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Leshan Radio Company
Leshan Radio Company

LDTC144WWT1G Datasheet Preview

LDTC144WWT1G Datasheet

Bias Resistor Transistor

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LDTC144WWT1G pdf
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTC144WWT1G
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
VCC
VIN
IO
IC(Max.)
PD
Tj
Tstg
Limits
50
10 to +40
30
100
200
150
55 to +150
3
1
2
SOT–323 (SC–70)
1
BASE
R1
R2
3
COLLECTOR
2
Unit EMITTER
V
V
mA
mW
°C
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC144WWT1G
8P
47 22 3000/Tape & Reel
LDTC144WWT3G 8P
47 22 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Characteristics of built-in transistor
Symbol Min.
VI(off)
VI(on)
VO(on)
II
4
IO(off)
GI
56
R1 32.9
R2/R1 0.37
fT
Typ.
0.1
47
0.47
250
Max. Unit
0.8
V
0.3 V
0.16 mA
0.5 µA
−−
61.1 k
0.57
MHz
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=2mA
IO=10mA, II=0.5mA
VI=5V
VCC=50V, VI=0V
IO=5mA, VO=5V
VCE=10V, IE= 5mA, f=100MHz
1/3



Leshan Radio Company
Leshan Radio Company

LDTC144WWT1G Datasheet Preview

LDTC144WWT1G Datasheet

Bias Resistor Transistor

No Preview Available !

LDTC144WWT1G pdf
LESHAN RADIO COMPANY, LTD.
LDTC144WWT1G
zElectrical characteristic curves
100
VO=0.3V
50
20
10
5
2
1
500m
Ta= −40°C
Ta=25°C
Ta=100°C
200m
100m
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. Output current
(ON characteristics)
10m
VCC=5V
5m
2m
1m
500µ
200µ
100µ
50µ
Ta=100°C
Ta=25°C
20µ
10µ
5µ
2µ
1µ
0
Ta= −40°C
500m 1
1.5 2
2.5
INPUT VOLTAGE : VI(off) (V)
3
Fig.2 Output current vs. Input voltage
(OFF characteristics)
1k
VO=5V
500
200
100
50
20
10
5
Ta=100°C
Ta=25°C
Ta= −40°C
2
1
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. Output current
IO/II=20/1
500m
200m
100m
50m
Ta=100°C
Ta=25°C
20m
Ta= −40°C
10m
5m
2m
1m
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. Output current
2/3


Part Number LDTC144WWT1G
Description Bias Resistor Transistor
Maker Leshan Radio Company
Total Page 3 Pages
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