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Leshan Radio Company
Leshan Radio Company

LDTC144VWT3G Datasheet Preview

LDTC144VWT3G Datasheet

Bias Resistor Transistor

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LDTC144VWT3G pdf
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
VCC
VIN
IO
IC(Max.)
PD
Tj
Tstg
Limits
50
10 to +40
30
100
200
150
55 to +150
Unit
V
V
mA
mW
°C
°C
LDTC144VWT1G
3
1
2
SOT–323 (SC–70)
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC144VWT1G
N16
47 10 3000/Tape & Reel
LDTC144VWT3G N16
47 10 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Characteristics of built-in transistor
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
6
33
32.9
0.17
Typ. Max.
1
−−
0.1 0.3
0.16
0.5
−−
47 61.1
0.21 0.26
250
Unit
V
V
mA
µA
k
MHz
Conditions
VCC=5V , IO=100µA
VO=0.3V , IO=2mA
IO=10mA , II=0.5mA
VI=5V
VCC=50V , VI=0V
IO=5mA , VO=5V
VCE=10V , IE= −5mA , f=100MHz
1/3



Leshan Radio Company
Leshan Radio Company

LDTC144VWT3G Datasheet Preview

LDTC144VWT3G Datasheet

Bias Resistor Transistor

No Preview Available !

LDTC144VWT3G pdf
LESHAN RADIO COMPANY, LTD.
LDTC144VWT1G
zElectrical characteristic curves
Ta=25°C
50 VO=0.3V
20
10
5
2
1
500m
200m
100m
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. Output current
(ON characteristics)
10m
Ta=25°C
5m VCC=5V
2m
1m
500µ
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
2 34 5
INPUT VOLTAGE : VI(off) I(V)
Fig.2 Output current vs. Input voltage
(OFF characteristics)
1000
Ta=25°C
500 VO=5V
200
100
50
20
10
5
2
1
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. Output current
1
Ta=25°C
500m IO/II=20
200m
100m
50m
20m
10m
5m
2m
1m
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. Output current
2/3


Part Number LDTC144VWT3G
Description Bias Resistor Transistor
Maker Leshan Radio Company
Total Page 3 Pages
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