http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Leshan Radio Company
Leshan Radio Company

LDTC144TWT1G Datasheet Preview

LDTC144TWT1G Datasheet

Bias Resistor Transistor

No Preview Available !

LDTC144TWT1G pdf
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTC144TWT1G
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
50
50
5
100
200
150
55 to +150
3
1
2
SOT–323 (SC–70)
1
BASE
R1
R2
Unit
V
V
mA
mW
°C
°C
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC144TWT1G
8T
47 -
3000/Tape & Reel
LDTC144TWT3G
8T
47 -
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 50
Collector-emitter breakdown voltage BVCEO 50
Emitter-base breakdown voltage
BVEBO 5
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE 100
Input resistance
R1 32.9
Transition frequency
fT ∗ −
Characteristics of built-in transistor
Typ.
250
47
250
Max.
0.5
0.5
0.3
600
61.1
Unit
V
V
V
µA
µA
V
k
MHz
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=50V
VEB=4V
IC/IB=5mA/0.5mA
VCE=5V, IC=1mA
VCE=10V, IE= −5mA, f=100MHz
1/3



Leshan Radio Company
Leshan Radio Company

LDTC144TWT1G Datasheet Preview

LDTC144TWT1G Datasheet

Bias Resistor Transistor

No Preview Available !

LDTC144TWT1G pdf
zElectrical characteristic curves
1k
VCE=5V
500
200
100 Ta=100°C
25°C
50 40°C
20
10
5
2
1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector
current
LESHAN RADIO COMPANY, LTD.
LDTC144TWT1G
1
500m
200m
100m Ta=100°C
25°C
50m 40°C
lC/lB=10
20m
10m
5m
2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
2/3


Part Number LDTC144TWT1G
Description Bias Resistor Transistor
Maker Leshan Radio Company
Total Page 3 Pages
PDF Download
LDTC144TWT1G pdf
Download PDF File
LDTC144TWT1G pdf
View for Mobile






Related Datasheet

1 LDTC144TWT1G Bias Resistor Transistor Leshan Radio Company
Leshan Radio Company
LDTC144TWT1G pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components