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Leshan Radio Company
Leshan Radio Company

LDTC144GWT1G Datasheet Preview

LDTC144GWT1G Datasheet

Bias Resistor Transistor

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LDTC144GWT1G pdf
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTC144GWT1G
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector DTC144GE
Power
DTC144GUA / DTC144GKA
dissipation DTC144GSA
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
50
50
5
100
150
200
300
150
55 to +150
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC144GWT1G L1
_ 47 3000/Tape & Reel
LDTC144GWT3G L1
_ 47 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
Min.
50
50
5
65
68
32.9
Typ.
47
250
Max.
0.5
130
0.3
61.1
3
1
2
SOT–323 (SC–70)
1
BASE R2
Unit
V
V
V
mA
mW
C
C
3
COLLECTOR
2
EMITTER
Unit
V
V
V
µA
µA
V
k
MHz
Conditions
IC=50µA
IC=1mA
IE=160µA
VCB=50V
VEB=4V
IC=10mA , IB=0.5mA
IC=5mA , VCE=5V
VCE=10V , IE= −5mA , f=100MHz
1/3



Leshan Radio Company
Leshan Radio Company

LDTC144GWT1G Datasheet Preview

LDTC144GWT1G Datasheet

Bias Resistor Transistor

No Preview Available !

LDTC144GWT1G pdf
zElectrical characteristic curves
1k
VCE=5V
500
200
100
50
20
10
5
Ta=25°C
Ta=100°C
Ta= −40°C
2
1
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. Collector current
LESHAN RADIO COMPANY, LTD.
LDTC144GWT1G
1
IC/IB=20/1
500m
200m
100m
50m
20m
10m
5m
Ta=25°C
Ta=100°C
Ta= −40°C
2m
1m
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
2/3


Part Number LDTC144GWT1G
Description Bias Resistor Transistor
Maker Leshan Radio Company
Total Page 3 Pages
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1 LDTC144GWT1G Bias Resistor Transistor Leshan Radio Company
Leshan Radio Company
LDTC144GWT1G pdf




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