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Leshan Radio Company
Leshan Radio Company

LDTC124GWT3G Datasheet Preview

LDTC124GWT3G Datasheet

Bias Resistor Transistor

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LDTC124GWT3G pdf
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
50
50
5
100
200
150
55 to +150
Unit
V
V
V
mA
mW
C
C
LDTC124GWT1G
3
1
2
SOT–323 (SC–70)
1
BASE R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC124GWT1G H9
22 3000/Tape & Reel
LDTC124GWT3G H9
22 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
Min.
50
50
5
140
56
15.4
Typ.
22
250
Max.
0.5
260
0.3
28.6
Unit
V
V
V
µA
µA
V
k
MHz
Conditions
IC= 50µA
IC= 1mA
IE= 330µA
VCB= 50V
VEB= 4V
IC= 10mA , IB= 0.5mA
IC= 5mA , VCE= 5V
VCE= 10V , IE= 5mA , f= 100MHz
1/3



Leshan Radio Company
Leshan Radio Company

LDTC124GWT3G Datasheet Preview

LDTC124GWT3G Datasheet

Bias Resistor Transistor

No Preview Available !

LDTC124GWT3G pdf
z Electrical characteristic curves
LESHAN RADIO COMPANY, LTD.
LDTC124GWT1G
1k
VCE=5V
500
200
100
50
Ta=100°C
Ta=25°C
Ta= −40°C
20
10
5
2
1
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. Collector current
1
IC/IB=20/1
500m
200m
100m
50m
20m
10m
5m
Ta=100°C
Ta=25°C
Ta= −40°C
2m
1m
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
2/3


Part Number LDTC124GWT3G
Description Bias Resistor Transistor
Maker Leshan Radio Company
Total Page 3 Pages
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Leshan Radio Company
LDTC124GWT3G pdf




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