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LDTA124TWT1G Datasheet Preview

LDTA124TWT1G Datasheet

Bias Resistor Transistor

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LDTA124TWT1G pdf
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
Limits
50
50
5
Collector current
IC 100
Collector power dissipation
PC 150
Junction temperature
Storage temperature
Tj
Tstg
150
55 to +150
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA124TWT1G
O6
22
3000/Tape & Reel
LDTA124TWT3G
O6
22
10000/Tape & Reel
Unit
V
V
V
mA
mW
°C
°C
LDTA124TWT1G
3
1
2
SOT–323 (SC–70)
1
BASE
R1
3
COLLECTOR
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE
Input resistance
R1
Transition frequency
Characteristics of built-in transistor
fT
Min.
50
50
5
100
15.4
Typ.
250
22
250
Max.
0.5
0.5
0.3
600
28.6
Unit
V
V
V
µA
µA
V
k
MHz
Conditions
IC=−50µA
IC=−1mA
IE=−50µA
VCB=−50V
VEB=−4V
IC/IB=−5mA/0.5mA
VCE=−5V, IC=1mA
VCE=−10V, IE=5mA, f=100MHz
1/3



LRC
LRC

LDTA124TWT1G Datasheet Preview

LDTA124TWT1G Datasheet

Bias Resistor Transistor

No Preview Available !

LDTA124TWT1G pdf
zElectrical characteristic curves
1k
VCE=5V
500
200
100 Ta=100°C
50 25°C
40°C
20
10
5
2
1
-100µ -200µ -500µ -1m -2m -5m -10m -20m -50m -100m
COLLECTOR URRENT : IC (A)
Fig.1 DC current gain vs. collector current
LESHAN RADIO COMPANY, LTD.
LDTA124TWT1G
-1
-500m
IC/IB=10
-200m
-100m
-50m
-20m
-10m
-5m
Ta=100°C
25°C
40°C
-2m
-1m
-10µ -20µ -50µ -100µ -200µ -500µ -1m -2m -5m -10m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
2/3


Part Number LDTA124TWT1G
Description Bias Resistor Transistor
Maker LRC
Total Page 3 Pages
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