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LDTA123TWT3G Datasheet Preview

LDTA123TWT3G Datasheet

Bias Resistor Transistor

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LDTA123TWT3G pdf
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
50
50
5
100
200
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
LDTA123TWT1G
3
1
2
SOT–323 (SC–70)
1
BASE
R1
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA123TWT1G
6R
2.2
3000/Tape & Reel
LDTA123TWT3G
6R
2.2
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Characteristics of built-in transistor.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
Min.
50
50
5
100
1.54
Typ.
250
2.2
250
Max.
0.5
0.5
0.3
600
2.86
Unit
V
V
V
µA
µA
V
k
MHz
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=50V
VEB=4V
IC/IB=5mA/0.25mA
IC=1mA , VCE=5V
VCB=10V , IE= 5mA , f=100MHz
1/3



LRC
LRC

LDTA123TWT3G Datasheet Preview

LDTA123TWT3G Datasheet

Bias Resistor Transistor

No Preview Available !

LDTA123TWT3G pdf
zElectrical characteristic curves
LESHAN RADIO COMPANY, LTD.
LDTA123TWT1G
1k
VCE=5V
500
200
100
50
Ta=100°C
25°C
40°C
20
10
5
2
1
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC Current gain
vs. Collector Current
1
500m
200m
100m
50m
Ta=100°C
25°C
40°C
IC/IB=10
20m
10m
5m
2m
1m
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage
vs. Collector Current
2/3


Part Number LDTA123TWT3G
Description Bias Resistor Transistor
Maker LRC
Total Page 3 Pages
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