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LDTA115TWT1G Datasheet Preview

LDTA115TWT1G Datasheet

Bias Resistor Transistor

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LDTA115TWT1G pdf
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
Limits
50
50
5
Collector current
IC 100
Collector Power dissipation
Junction temperature
PC 200
Tj 150
Storage temperature
Tstg
55 to +150
Unit
V
V
V
mA
mW
°C
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA115TWT1G
6U
100
- 3000/Tape & Reel
LDTA115TWT3G
6U
100
- 10000/Tape & Reel
LDTA115TWT1G
3
1
2
SOT–323 (SC–70)
1
BASE
R1
3
COLLECTOR
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
BVCEO
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
Collector-emitter saturation voltage
IEBO
VCE(sat)
DC current transfer ratio
hFE
Input resistance
R1
Transition frequency
fT
Characteristics of built-in transistor
Min. Typ. Max. Unit
Conditions
50 − − V IC= −50µA
50 − − V IC= −1mA
5 − − V IE= −50µA
0.5
µA VCB= −50V
0.5
µA VEB= −4V
− − 0.3 V IC/IB= −1mA/0.1mA
100 250 600
IC= −1mA , VCE= −5V
70 100 130 k
250 MHZ VCE= −10V , IE=5mA , f=100MHZ
1/3



LRC
LRC

LDTA115TWT1G Datasheet Preview

LDTA115TWT1G Datasheet

Bias Resistor Transistor

No Preview Available !

LDTA115TWT1G pdf
LESHAN RADIO COMPANY, LTD.
LDTA115TWT1G
zElectrical characteristic curves
1k
VCE=5V
500
200
100
50
Ta=25°C
Ta=100°C
Ta= −40°C
20
10
5
2
1
10µ 20µ
50µ 100µ 200µ 500µ 1m 2m
5m 10m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. Collector current
1
IC/IB=10/1
500m
200m
100m
Ta=100°C
50m
Ta=25°C
20m
10m
5m
Ta= −40°C
2m
1m
10µ 20µ
50µ 100µ 200µ 500µ 1m 2m
5m 10m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
2/3


Part Number LDTA115TWT1G
Description Bias Resistor Transistor
Maker LRC
Total Page 3 Pages
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