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LDTA114TWT1G Datasheet Preview

LDTA114TWT1G Datasheet

Bias Resistor Transistor

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LDTA114TWT1G pdf
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTA114TWT1G
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
50
50
5
100
200
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
3
1
2
SOT–323 (SC–70)
1
BASE
R1
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA114TWT1G
6E
10 - 3000/Tape & Reel
LDTA114TWT3G
6E
10 - 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Characteristics of built-in transistor
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
Min.
50
50
5
100
7
Typ.
250
10
250
Max.
0.5
0.5
0.3
600
13
Unit
V
V
V
µA
µA
V
k
MHz
Conditions
IC=−50µA
IC=−1mA
IE=−50µA
VCB=−50V
VEB=−4V
IC/IB=−10mA/1mA
VCE=−5V, IC=−1mA
VCE=−10V, IE=5mA, f=100MHz
1/3



LRC
LRC

LDTA114TWT1G Datasheet Preview

LDTA114TWT1G Datasheet

Bias Resistor Transistor

No Preview Available !

LDTA114TWT1G pdf
LESHAN RADIO COMPANY, LTD.
LDTA114TWT1G
zElectrical characteristic curves
1k
VCE=−5V
500
200
100 Ta=100°C
25°C
50 40°C
20
10
5
2
1
100µ −200µ −500µ −1m 2m 5m 10m 20m 50m100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector
current
1
lC/lB=20
500m
200m Ta=100°C
25°C
100m 40°C
50m
20m
10m
5m
2m
1m
100µ −200µ −500µ −1m 2m 5m 10m 20m 50m100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
2/3


Part Number LDTA114TWT1G
Description Bias Resistor Transistor
Maker LRC
Total Page 3 Pages
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