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LDTA114GWT1G Datasheet Preview

LDTA114GWT1G Datasheet

Bias Resistor Transistor

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LDTA114GWT1G pdf
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Limits
50
50
5
100
Unit
V
V
V
mA
Pc 200 mW
Tj 150 °C
Tstg 55 to +150 °C
LDTA114GWT1G
3
1
2
SOT–323 (SC–70)
1
BASE R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA114GWT1G Q1
10 3000/Tape & Reel
LDTA114GWT3G Q1
10 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 50 − − V IC= −50µA
Collector-emitter breakdown voltage BVCEO 50 − − V IC= −1mA
Emitter-base breakdown voltage
BVEBO 5 − − V IE= −720µA
Collector cutoff current
ICBO − − −0.5 µA VCB= −50V
Emitter cutoff current
IEBO 300 − −580 µA VEB= −4V
Collector-emitter saturation voltage VCE(sat) − − −0.3 V IC= −10mA, IB= −0.5mA
DC current transfer ratio
hFE 30 − − − IC= −5mA, VCE= −5V
Emitter-base resistance
Transition frequency
R2 7 10 13 k
fT 250 MHz VCE= −10V, IE=50mA, f=100MHz
Transition frequency of the device.
1/3



LRC
LRC

LDTA114GWT1G Datasheet Preview

LDTA114GWT1G Datasheet

Bias Resistor Transistor

No Preview Available !

LDTA114GWT1G pdf
LESHAN RADIO COMPANY, LTD.
LDTA114GWT1G
zElectrical characteristic curves
Ta=25˚C
500 VO=5V
200
100
50
20
10
5
2
0.5 1 2
5 10 20 50 100
COLLECTOR CURRENT : Ic (mA)
Fig.1 DC Current gain
vs. Collector Current
1000
Ta=25˚C
500
200
100 IC / IB=20 / 1
IC / IB=10 / 1
50
20
10
12
5 10 20
50 100
COLLECTOR CURRENT : VDS (V)
Fig.2 Collector-emitter saturation voltage
vs. Collector Current
2/3


Part Number LDTA114GWT1G
Description Bias Resistor Transistor
Maker LRC
Total Page 3 Pages
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