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MMBTA56 Datasheet

PNP GENERAL PURPOSE TRANSISTOR

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MMBTA56 pdf
PNP GENERAL PURPOSE TRANSISTOR
MMBTA55 thru MMBTA56
REVERSE VOLTAGE – 60 to 80 Volts
FORWARD CURRENT – 0.5 Amperes
FEATURES
• Surface mount device
• Simplifies circuit design
• Reduces board space
• Reduces component count
SOT-23
MECHANICAL DATA
• Case: SOT-23 plastic
• Lead Free in RoHS 2002/95/EC Compliant
• Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
ABSOULTE RATINGS
PARAMETER
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current-continuous
THERMAL CHARACTERISTICS
PARAMETER
Total device dissipation FR-5 board (Note 1)
Thermal resistance junction to ambient
Total device dissipation alumina substrate (Note 2)
Thermal resistance junction to ambient
@ TA = 25°C
@ TA = 25°C
Junction and storage temperature rang
Note:
1. FR-5 = 1.0 * 0.75 * 0.062 in.
2. Alumina = 0.4 * 0.3 * 0.024 in 99.5% alumina.
ORDERING INFORMATION
DEVICE
MARKING
SHIPPING
MMBTA55
2H 3000/ Tape & Reel
MMBTA56
2GM
3000/ Tape & Reel
SYMBOL
VCEO
VCBO
VEBO
IC
SYMBOL
PD
RthJA
PD
RthJA
TJ ,TSTG
MMBTA55
-60
-60
-4.0
-500
MMBTA56
-80
-80
UNIT
Vdc
Vdc
Vdc
mAdc
MAX.
UNIT
225 mW
556 °C/W
300 mW
417 °C/W
-55 to +150
°C
REV-0, MAY.-2015, KSPR19



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PNP GENERAL PURPOSE TRANSISTOR

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ELECTRICAL CHARACTERISTIC
MMBTA55 thru MMBTA56
OFF CHARACTERISTICS
PARAMETER
TEST CONDITION
Collector-emitter breakdown
voltage (Note 3)
IC = - 1.0 mAdc, IB = 0
MMBTA55
MMBTA56
Emitter-base breakdown voltage IE = - 100 uAdc, IC = 0
Collector cutoff current
VCE = - 60 Vdc, IB = 0
MMBTA55
MMBTA56
MMBTA55
MMBTA56
Collector cutoff current
ON CHARACTERISTICS
VCE = - 60 Vdc, IE = 0
VCE = - 80 Vdc, IE = 0
MMBTA55
MMBTA56
PARAMETER
TEST CONDITION
DC current gain
IC = - 10 mAdc, ICE = - 1.0 Vdc
IC = - 100 mAdc, ICE = - 1.0 Vdc
IC = - 10 mAdc, ICE = - 1.0 Vdc
IC = - 100 mAdc, ICE = - 1.0 Vdc
Collector-emitter saturation voltage IC = - 100 mAdc, IB = - 10 mAdc
MMBTA55
MMBTA56
MMBTA55
MMBTA56
Base-emitter on voltage
IC = - 100 mAdc, VCE = - 1.0 Vdc
MMBTA55
MMBTA56
SMALL – SIGNAL CHARACTERISTICS
PARAMETER
TEST CONDITION
Current-gain-bandwidth product
(Note 4)
IC = -100 mAdc, VCE = - 1.0 Vdc,
f = 100 MHz
Note:
3. Pulse Test: pulse width 300 µs, duty cycle 2.0%
4. fT is defined as the frequency at whichh f eextrapolates to unity..
MMBTA55
MMBTA56
SYMBOL
V(BR)CEO
V(BR)EBO
ICES
ICBO
SYMBOL
hFE
VCE(SAT)
VBE(SAT)
SYMBOL
fT
MIN.
- 60
- 80
- 4.0
--
--
MIN.
100
100
--
--
MIN.
50
FIG.1 - Switching time test circuits
MAX
--
--
- 0.1
- 0.1
UNIT
Vdc
V
µAdc
µAdc
MAX
--
--
- 0.25
- 1.2
UNIT
--
Vdc
Vdc
MAX
--
UNIT
MHz
* Total shunt capacitance of test jig and connectors for PNP test circuits, reverse all voltage polarities.


Part Number MMBTA56
Description PNP GENERAL PURPOSE TRANSISTOR
Maker LITE-ON
Total Page 6 Pages
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MMBTA56 pdf
MMBTA56 Datasheet PDF
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