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LGE
LGE

2SA1012 Datasheet Preview

2SA1012 Datasheet

PNP Transistor

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2SA1012 pdf
2SA1012(PNP)
TO-220 Transistor
1. BASE
2. COLLECTOTR
3. EMITTER
TO-220
Features
3
2
1
— HIGH CURRENT SWITCHING APPLICATIONS.
— Low Collector Saturation Voltage
: VCE(SAT) = - 0.4V(MAX) at IC= - 3A
— High Speed Swithing Time : tstg = 1.0us (Typ.)
— Complementary to 2SC2562
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
-60
-50
-5
-5
2
150
-55-150
V
V
V
A
W
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS(Tamb=25unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
IC =-1mA, IE=0
IC =-1mA, IB=0
IE=-100μA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
-60
-50
-5
V
V
V
-1 μA
-1 μA
DC current gain
hFE(1)
VCE=-1V, IC=-1A
70
240
Collector-emitter saturation voltage
hFE(2) *
VCE(sat) *
VCE=-1V, IC=-3A
IC=-3A, IB=150mA
30
-0.2 -0.4
V
Base-emitter saturation voltage
VBE(SAT) IC=-3A, IB=150mA
-0.9 -1.2
V
Transition frequency
Collector output capacitance
fT VCE=-4V, IC=-1A
Cob VCB=-10V, IE=0, f=1MHz
60
170
MHz
pF
Switching
time
Turn-on Time
Storage Time
Fall Time
*Pulse test: tp300μS, δ0.02.
CLASSIFICATION OF hFE
Rank
ton
VCC=-30V,IC=-3A,
tstg
IB1=-IB2=-0.15A
tf
O
0.1
1.0
0.1
Y
us
Range
70-140
120-240



LGE
LGE

2SA1012 Datasheet Preview

2SA1012 Datasheet

PNP Transistor

No Preview Available !

2SA1012 pdf
Typical Characteristics
2SA1012(PNP)
TO-220 Transistor


Part Number 2SA1012
Description PNP Transistor
Maker LGE
Total Page 3 Pages
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