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2SK3322 Datasheet Preview

2SK3322 Datasheet

MOS Field Effect Transistor

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2SK3322 pdf
SMD Type
MOS Field Effect Transistor
2SK3322
MOSFET
Features
Low gate charge
QG = 15 nC TYP. (VDD = 450V, VGS = 10 V, ID = 5.5A)
Gate voltage rating 30 V
Low on-state resistance
RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 2.8A)
Avalanche capability ratings
TO-263
+0.2
4.57+0.1 -0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TA=25
TC=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
VDSS
VGSS
ID
Idp *
PD
Tch
Tstg
Rating
600
30
5.5
20
1.5
65
150
-55 to +150
Unit
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
Testconditons
VDS=600V,VGS=0
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=2.8A
VGS=10V,ID=2.8A
VDS=10V,VGS=0,f=1MHZ
ID=2.8A,VGS(on)=10V,RG=10
,VDD=150V
Min Typ Max Unit
100 A
10 A
2.5 3.5 V
1.0 S
1.7 2.2
550 pF
115 pF
13 pF
12 ns
10 ns
35 ns
12 ns
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Part Number 2SK3322
Description MOS Field Effect Transistor
Maker Kexin
Total Page 1 Pages
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