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Jingdao Electronic
Jingdao Electronic

H13005 Datasheet Preview

H13005 Datasheet

NPN Transistor

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H13005 pdf
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
H13005
Bipolar Junction Transistor
Si NPN
RoHS COMPLIANT
1.APPLICATION
Fluorescent LampElectronic Ballast
Charger and Switch-mode power supplies
2.FEATURES
High voltage capability
Features of good high temperature
High switching speed
3.PACKAGE
SOT-82
4.Electrical Characteristics
4.1 Absolute Maximum Ratings
1 Base(B) 2 Collector(C) 3 Emitter(E)
Tamb= 25unless specified
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Power Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25unless specified
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emittor Voltage
Emittor-Base Voltage
Collector-Base Cutoff Current
Collector-Emittor Cutoff Current
Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation Voltage
Base-Emittor Saturation Voltage
Rising Time
Falling Time
Storage Time
Typical Frequency
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE*
VCE
*
sat
VBE
*
sat
tr
tf
ts
fT
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
700
400
9
4
1.25
50
150
-55150
V
V
V
A
W
TEST CONDITION
IC=1mAIE=0
IC=1mAIB=0
IE=1mAIC=0
VCB=700V, IE=0
VCE=400V, IB=0
VEB=9V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=1A
IC=2A, IB=1A
IC=2A, IB=1A
IC=500mA (UI9600)
VCE=10V,IC=0.1A,
f=1MHz
VALUE
MIN TYP MAX
700
400
9
10
20
10
8
15 30
0.6
1.2
0.8
0.6
2.0 4.0
UNIT
V
V
V
μA
μA
μA
V
V
μs
μs
μs
5 MHz
*: Pulse test tp300μs,δ≤2%
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
1 2013



Jingdao Electronic
Jingdao Electronic

H13005 Datasheet Preview

H13005 Datasheet

NPN Transistor

No Preview Available !

H13005 pdf
R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
5. Characteristic Curve
Fig1 SOADC
10
Ta=25
1.0
50
40
30
H13005
Bipolar Junction Transistor
Fig2 PtotT
Ptot-Tc
0.1
0.01
1
10 100
VCE (V)
1000
Fig3 Static Characteristic
3.0
Ta=25
IB=200mA
20
10
Ptot-Ta
0
0 50 100
Tc ( C)
Fig4 hFE-IC
150
100
Ta=25
1.5
IB=40mA
IB=20mA
0
0
5
VCE (V)
Fig5 VCEsat-IC
10
Ta=25
IC/IB=2
1
10
0.1
10
VCE=5V
1
1mA 0.01
0.1
IC (A)
Fig6 VBEsat-IC
1.5
Ta=25
IC/IB=2
1
10
1.0
0.01
0.1
1
Ic (A)
10
0.5
0.1
1
Ic (A)
10
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
2 2013


Part Number H13005
Description NPN Transistor
Maker Jingdao Electronic
Total Page 3 Pages
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