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Isahaya Electronics Corporation
Isahaya Electronics Corporation

RTAN230x Datasheet Preview

RTAN230x Datasheet

TRANSISTOR

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RTAN230x pdf
RTAN230X SERIES
TRAwNwSwIS.DTOatRaSWheITeHt4UR.EcSoImSTOR
FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
FEATURE
・Built-in bias resistor(R1=2.2kΩ)
・Small package for easy mounting.
・High reverse hFE
・Small collector to emitter saturation voltage.
VCE(sat)=10mV(TYP.)(@IC=10mA/IB=0.5mA)
・Low on Resistance
Ron=0.70Ω(TYP.)(@VI=5V)
APPLICATION
muting circuit , switching circuit
OUTLINE DRAWING
RTAN230T2 (PRELIMINARY)
0.2 0.8 0.2
Unit:mm
RTAN230M
2.1
0.425 1.25 0.425
②③
②③
EQUIVALENT CIRCUIT
R1
B
(IN)
C
(OUT)
E
(GND)
JEITA, JEDEC:-
ISAHAYA:T-USM
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
RTAN230U
1.6
0.4 0.8 0.4
②③
JEITA:SC-70
JEDEC:-
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
RTAN230C
2.5
0.5 1.5 0.5
②③
JEITA:SC-75A
JEDEC:-
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
JEITA:SC-59
JEDEC:Similar to TO-236
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
ISAHAYA ELECTRONICS CORPORATION



Isahaya Electronics Corporation
Isahaya Electronics Corporation

RTAN230x Datasheet Preview

RTAN230x Datasheet

TRANSISTOR

No Preview Available !

RTAN230x pdf
RTAN230X SERIES
TRAwNwSwIS.DTOatRaSWheITeHt4UR.EcSoImSTOR
FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
CBO
EBO
CEO
Tj
Tstg
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector
dissipation(Ta=25℃)
Junction temperature
Storage temperature
RTAN230T2
125(※)
+125
-55~+125
RATING
RTAN230U
RTAN230M
40
40
20
400
RTAN230C
150 200
+150
-55~+150
UNIT
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS(Ta=25℃)
※package mounted on 9mm×19mm×1mm glass-epoxy substrate.
SYMBOL
PARAMETER
(BR)CBO
(BR)EBO
(BR)CEO
CBO
EBO
FE
CE(sat)
RON
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Input resistance
Gain band width product
Output “ON” resistance
TEST CONDITION
I C=50μA,IE=0mA
I E=50μA,IC=0mA
I C=1mA,RBE=∞
VCB=40V,I E =0mA
VEB=40V,I C =0mA
VCE=5V,I C =10mA
I C =10mA,I B =0.5mA
VCE=10V,I E =-10mA,f=100MHz
VI=5V,RL=1kΩ
LIMIT
MIN TYP MAX
40
40
20
0.5
0.5
820 2500
10
1.54 2.2 2.86
40
0.70
UNIT
V
V
V
μA
μA
mV
MHz
Ω
TYPICAL CHARACTERISTICS
INPUT ON VOLTAGE
VS. COLLECTOR CURRENT
100
Ta=25℃
VCE=0.2V
10
1
1000
COLLECTOR CURRENT
VS. INPUT OFF VOLTAGE
Ta=25℃
VCE=5V
100
0.1
0.1
1 10 100
COLLECTOR CURRENT IC (mA)
1000
10
0
0.2 0.4 0.6 0.8
INPUT OFF VOLTAGE VI(OFF) (V)
1
ISAHAYA ELECTRONICS CORPORATION


Part Number RTAN230x
Description TRANSISTOR
Maker Isahaya Electronics Corporation
Total Page 4 Pages
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