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Intersil Electronic Components Datasheet

RLP1N08LE Datasheet

1A/ 80V/ 0.750 Ohm/ Current Limited/ N-Channel Power MOSFET

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RLP1N08LE pdf
Data Sheet
RLP1N08LE
April 1999 File Number 2252.3
1A, 80V, 0.750 Ohm, Current Limited,
N-Channel Power MOSFET
The RLP1N08LE is a semi-smart monolithic power circuit
which incorporates a lateral bipolar transistor, two resistors,
a zener diode, and a PowerMOS transistor. Good control of
the current limiting levels allows use of these devices where
a shorted load condition may be encountered. “Logic level”
gates allow this device to be fully biased on with only 5V
from gate to source. The zener diode provides ESD
protection up to 2kV. These devices can be produced on the
standard PowerMOS production line.
Formerly developmental type TA09842.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RLP1N08LE
TO-220AB
L1N08LE
NOTE: When ordering, use the entire part number.
Features
• 1A, 80V
• rDS(ON) = 0.750
• ILIMIT at 150oC = 1.5A Maximum
• Built-in Current Limiting
• ESD Protected
• Controlled Switching Limits EMI and RFI
• Specified for 150oC Operation
• Temperature Compensated Spice Model Provided
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
S
6-435
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RLP1N08LE Datasheet

1A/ 80V/ 0.750 Ohm/ Current Limited/ N-Channel Power MOSFET

No Preview Available !

RLP1N08LE pdf
RLP1N08LE
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Electrostatic Voltage at 100pF, 1500. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ESD
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Gate to Source Voltage (Reverse Voltage Gate Bias Not Allowed) . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
RLP1N08LE
80
80
2
Self Limited
5.5
30
0.24
-55 to 150
300
260
UNITS
V
V
kV
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Limiting Current
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Electrostatic Voltage
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
IDS(Lim)
t(ON)
td(ON)
tr
td(OFF)
tf
t(OFF)
RθJC
RθJA
ESD
ID = 250µA, VGS = 0V, Figure 7
VGS = VDS, ID = 250µA, Figure 8
VDS = 65V, VGS = 0V TC = 25oC
TC = 150oC
VGS = 5V, TC = 150oC
ID = 1A, VGS = 5V
Figure 6
TC = 25oC
TC = 150oC
VDS = 15V, VGS = 5V
Figure 3
TC = 25oC
TC = 150oC
VDD = 30V, ID = 1A, VGS = 5V, RGS = 25
RL = 30
TO-220AB
Human Model (100pF, 1.5k)
MIN
80
1
-
-
-
-
-
1.8
1.1
-
-
1
-
1
-
-
-
2000
TYP
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
-
2
1
50
50
0.750
1.5
3
1.5
6.5
1.5
5
7.5
5
12.5
4.17
62
-
UNITS
V
V
µA
µA
µA
A
A
µs
µs
µs
µs
µs
µs
oC/W
oC/W
V
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 1A
Reverse Recovery Time
trr ISD = 1A
NOTES:
2. Pulsed: pulse duration = 300µs maximum, duty cycle = 2%.
3. Repititive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
- - 1.5 V
- - 1 ms
6-436


Part Number RLP1N08LE
Description 1A/ 80V/ 0.750 Ohm/ Current Limited/ N-Channel Power MOSFET
Maker Intersil Corporation
Total Page 9 Pages
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