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Intersil Electronic Components Datasheet

RLD03N06CLESM Datasheet

0.3A/ 60V/ 6 Ohm/ ESD Rated/ Current Limited/ Voltage Clamped/ Logic Level N-Channel Power MOSFETs

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RLD03N06CLESM pdf
Data Sheet
RLD03N06CLE, RLD03N06CLESM,
RLP03N06CLE
July 1999 File Number 3948.5
0.3A, 60V, 6 Ohm, ESD Rated, Current
Limited, Voltage Clamped, Logic Level
N-Channel Power MOSFETs
These are intelligent monolithic power circuits which
incorporate a lateral bipolar transistor, resistors, zener
diodes and a power MOS transistor. The current limiting of
these devices allow it to be used safely in circuits where a
shorted load condition may be encountered. The drain to
source voltage clamping offers precision control of the circuit
voltage when switching inductive loads. The “Logic Level”
gate allows this device to be fully biased on with only 5V
from gate to source, thereby facilitating true on-off power
control directly from logic level (5V) integrated circuits.
These devices incorporate ESD protection and are designed
to withstand 2kV (Human Body Model) of ESD.
Formerly developmental type TA49028.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RLD03N06CLE
TO-251AA
03N06C
RLD03N06CLESM TO-252AA
03N06C
RLP03N06CLE
TO-220AB
03N06CLE
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in tape and reel, i.e. RLD03N06CLESM9A.
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• 0.30A, 60V
• rDS(ON) = 6.0
• Built in Current Limit ILIMIT 0.140 to 0.210A at 150oC
• Built in Voltage Clamp
• Temperature Compensating PSPICE® Model
• 2kV ESD Protected
• Controlled Switching Limits EMI and RFI
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
6-418
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RLD03N06CLESM Datasheet

0.3A/ 60V/ 6 Ohm/ ESD Rated/ Current Limited/ Voltage Clamped/ Logic Level N-Channel Power MOSFETs

No Preview Available !

RLD03N06CLESM pdf
RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage (Reverse Voltage Gate Bias Not Allowed) . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Power Dissipation . . .
Derate Above 25oC
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Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . .ESD
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
RLD03N06CLE, RLD03N06CLESM,
RLP03N06CLE
60
60
+5.5
Self Limited
30
0.2
2
-55 to 175
300
260
UNITS
V
V
V
W
W/oC
KV
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Limiting Current
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
IDS(LIMIT)
tON
td(ON)
tr
td(OFF)
tf
tOFF
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = 45V,
TJ = 25oC
VGS = 0V
TJ = 150oC
VGS = 5V
TJ = 25oC
TJ = 150oC
ID = 0.100A,
VGS = 5V
TJ = 25oC
TJ = 150oC
VDS = 15V,
VGS = 5V
TJ = 25oC
TJ = 150oC
VDD = 30V, ID = 0.10A,
RL = 300Ω, VGS = 5V,
RGS = 25
VDS = 25V, VGS = 0V,
f = 1MHz
TO-220 Package
TO-251 and TO-252 Packages
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
VSD
ISD = 0.1A
Diode Reverse Recovery Time
trr ISD = 0.1A, dISD/dt = 100A/µs
NOTES:
2. Pulsed: pulse duration = 300µs maximum, duty cycle = 2%.
3. Repititive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
60 - 85 V
1 - 2.5 V
- - 25 µA
- - 250 µA
- - 5 µA
- - 20 µA
- - 6.0
- - 12.0
280 - 420 mA
140 - 210 mA
- - 7.5 µs
- - 2.5 µs
- - 5.0 µs
- - 7.5 µs
- - 5.0 µs
- - 12.5 µs
- 100 -
pF
- 65 - pF
- 3.0 - pF
- - 5.0 oC/W
- - 80 oC/W
- - 100 oC/W
MIN TYP MAX UNITS
- - 1.5 V
- - 1.0 ms
6-419


Part Number RLD03N06CLESM
Description 0.3A/ 60V/ 6 Ohm/ ESD Rated/ Current Limited/ Voltage Clamped/ Logic Level N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 9 Pages
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