http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Intersil Electronic Components Datasheet

RFP50N05 Datasheet

50A/ 50V/ 0.022 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFP50N05 pdf
Data Sheet
50A, 50V, 0.022 Ohm, N-Channel Power
MOSFETs
These are N-Channel power MOSFET’S manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors.
Formerly developmental type TA09772.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG50N05
TO-247
RFG50N05
RFP50N05
TO-220AB
RFP50N05
NOTE: When ordering, include the entire part number.
Packaging
JEDEC STYLE TO-247
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
RFG50N05, RFP50N05
July 1999 File Number 2873.3
Features
• 50A, 50V
• rDS(ON) = 0.022
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
4-462
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP50N05 Datasheet

50A/ 50V/ 0.022 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFP50N05 pdf
RFG50N05, RFP50N05
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Eas
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
RFG50N05, RFP50N05
50
50
50
120
±20
132
0.88
Refer to UIS SOA Curve
-55 to 175
300
260
UNITS
V
V
A
A
V
W
W/ oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(TH)
ID = 0.250µA, VGS = 0V (Figure 9)
VDS = VGS, ID = 0.250µA (Figure 8)
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current,
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
IDSS
IGSS
rDS(ON)
t(ON)
td(ON)
tr
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC
VGS = ±20V
ID = 50A, VGS = 10V (Figure 7)
VDD = 25V, ID 25A, RL = 1.0Ω,
RGS = 6.67, VGS = 10V
(Figure 11)
Turn-Off Delay Time
Fall Time
td(OFF)
tf
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
t(OFF)
Qg(tot)
Qg(10)
Qg(th)
RθJC
RθJA
VGS = 0-20V
VGS = 0-10V
VGS = 0-2V
TO-220
TO-247
VDD - 40V, ID = 50A
RL = 0.8Ω, IG(REF) = 1.5mA
(Figure 11)
MIN TYP MAX UNITS
50 -
-
V
2.0 - 4.0
V
--1
A
- - 25 µA
- - ±100 nA
-
- 0.022
-
- 100
ns
- 15 -
ns
- 55 -
ns
- 60 -
ns
- 15 -
ns
-
- 100
ns
- - 160 nC
- - 80 nC
- - 6 nC
- - 1.14 oC/W
- - 62 oC/W
30 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD ISD = 50A
Diode Reverse Recovery Time
trr ISD = 50A, dlSD/dt = 100A/µs
NOTES:
2. Pulsed test: pulse width 300µs duty cycle 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN TYP MAX UNITS
- 1.5 V
- 125 ns
4-463


Part Number RFP50N05
Description 50A/ 50V/ 0.022 Ohm/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 6 Pages
PDF Download
RFP50N05 pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 RFP50N05 50A/ 50V/ 0.022 Ohm/ N-Channel Power MOSFETs Intersil Corporation
Intersil Corporation
RFP50N05 pdf
2 RFP50N05L 50A/ 50V/ 0.022 Ohm/ Logic Level/ N-Channel Power MOSFETs Fairchild Semiconductor
Fairchild Semiconductor
RFP50N05L pdf
3 RFP50N05L 50A/ 50V/ 0.022 Ohm/ Logic Level/ N-Channel Power MOSFETs Intersil Corporation
Intersil Corporation
RFP50N05L pdf
4 RFP50N06 N-Channel Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor
RFP50N06 pdf
5 RFP50N06 50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs Intersil Corporation
Intersil Corporation
RFP50N06 pdf
6 RFP50N06 Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Harris
Harris
RFP50N06 pdf
7 RFP50N06LE 50A/ 60V/ 0.022 Ohm/ Logic Level N-Channel Power MOSFETs Intersil Corporation
Intersil Corporation
RFP50N06LE pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components