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Intersil Electronic Components Datasheet

RFP4N05L Datasheet

4A/ 50V and 60V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs

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RFP4N05L pdf
Data Sheet
RFP4N05L, RFP4N06L
July 1999 File Number 2876.2
4A, 50V and 60V, 0.800 Ohm, Logic Level,
N-Channel Power MOSFETs
The RFP4N05L and RFP4N06L are N-Channel enhancement
mode silicon gate power field effect transistors designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA09520.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP4N05L
TO-220AB
RFP4N05L
RFP4N06L
TO-220AB
RFP4N06L
NOTE: When ordering, include the entire part number.
Features
• 4A, 50V and 60V
• rDS(ON) = 0.800
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS,
TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Packaging
G
S
JEDEL TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
6-274
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP4N05L Datasheet

4A/ 50V and 60V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs

No Preview Available !

RFP4N05L pdf
RFP4N05L, RFP4N06L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage RGS = 20K(Note 1) . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current, RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derating Above TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFP4N05L
50
50
±10
4
10
25
0.2
-55 to 150
300
260
RFP4N06L
60
60
±10
4
10
25
0.2
-55 to 150
300
260
UNITS
V
V
V
A
A
W
W/ oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFP4N05L
BVDSS ID = 250µA, VGS = 0V
RFP4N06L
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA
VDS = Rated BVDSS
VDS = 0.8 x Rated BVDSS, TC = 125oC
VGS = ±10V, VDS = 0
ID = 4A, VGS = 5V
ID = 4A, VGS = 5V, (Figures 6, 7)
ID 4A, VDD = 30V, RG = 6.25,
RL = 7.5, VGS = 5V
(Figures 10, 11, 12)
VGS = 0V, VDS = 25V, f = 1MHz
(Figure 9)
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD ISD = 1A
Reverse Recovery Time
trr ISD = 2A, dlSD/dt = 100A/µs
NOTES:
2. Pulsed: pulse duration = 300µs max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
6-275
MIN TYP MAX UNITS
50 - - V
60 - - V
1 - 2V
- - 25 µA
- - 250 µA
-
-
±100
nA
- - 3.2 V
-
-
0.800
- 10 20 ns
- 65 130 ns
- 20 40 ns
- 30 60 ns
- - 225 pF
- - 100 pF
- - 40 pF
- - 5 oC/W
MIN TYP MAX UNITS
-
- 1.4
V
- 150 -
ns


Part Number RFP4N05L
Description 4A/ 50V and 60V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 5 Pages
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