http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Intersil Electronic Components Datasheet

RFP15P06 Datasheet

15A/ 60V/ 0.150 Ohm/ P-Channel Power MOSFETs

No Preview Available !

RFP15P06 pdf
RFD15P06, RFD15P06SM, RFP15P06
Data Sheet
July 1999 File Number 3988.3
15A, 60V, 0.150 Ohm, P-Channel Power
MOSFETs
These P-Channel power MOSFETs are manufactured using
the MegaFET process. This process which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09833.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD15P06
TO-251AA
F15P06
RFD15P06SM
TO-252AA
F15P06
RFP15P06
TO-220AB
RFP15P06
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD15P06SM9A.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 15A, 60V
• rDS(ON) = 0.150
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
4-103
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP15P06 Datasheet

15A/ 60V/ 0.150 Ohm/ P-Channel Power MOSFETs

No Preview Available !

RFP15P06 pdf
RFD15P06, RFD15P06SM, RFP15P06
Absolute Maximum Ratings TC = 25oC Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Figure 5) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFD15P06, RFD15P06SM, RFP15P06
-60
-60
15
Refer to Peak Current Curve
±20
Refer to UIS Curve
80
0.533
-55 to 175
300
260
UNITS
V
V
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(-10)
Qg(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, TC = 150oC
VGS = ±20V
ID 15A, VGS = -10V, (Figure 9)
VDD = -30V, ID = 7.5A
RL = 4.0, VGS = -10V
RG = 12.5
(Figure 13)
VGS = 0V to -20V
VGS = 0V to -10V
VGS = 0V to -2V
VDD = -48V, ID = 15A,
RL = 3.20
IG(REF) = 0.65mA
VDS = -25V, VGS = 0V
f = 1MHz
(Figure 12)
TO-220AB, TO-251AA, TO-252AA
TO-251AA, TO-252AA
TO-220AB
MIN TYP MAX UNITS
-60 - - V
-2.0 - -4.0 V
- - -1 µA
- - -25 µA
- - ±100 nA
- - 0.150 W
- - 60 ns
- 16 -
ns
- 30 -
ns
- 50 -
ns
- 20 -
ns
- - 100 ns
- - 150 nC
- - 75 nC
- - 3.5 nC
- 1150 -
pF
- 300 -
pF
- 56 -
pF
- - 1.875 oC/W
- - 100 oC/W
- - 62 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Source to Drain Diode Voltage (Notte 2)
VSD
ISD = -15A
- - -1.5
Reverse Recovery Time
trr ISD = -15A, dISD/dt = 100A/µs
- - 125
NOTES:
2. Pulsed: pulse duration 300ms Max, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
V
ns
4-104


Part Number RFP15P06
Description 15A/ 60V/ 0.150 Ohm/ P-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 8 Pages
PDF Download
RFP15P06 pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 RFP15P05 15A/ 50V/ 0.150 Ohm/ P-Channel Power MOSFETs Intersil Corporation
Intersil Corporation
RFP15P05 pdf
2 RFP15P06 15A/ 60V/ 0.150 Ohm/ P-Channel Power MOSFETs Intersil Corporation
Intersil Corporation
RFP15P06 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components