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Intersil Electronic Components Datasheet

RFP15N08L Datasheet

15A/ 80V/ 0.140 Ohm/ Logic Level/ N-Channel Power MOSFET

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RFP15N08L pdf
Data Sheet
RFP15N08L
June 1999 File Number 2840.1
15A, 80V, 0.140 Ohm, Logic Level,
N-Channel Power MOSFET
The RFP15N08L is an N-Channel enhancement mode
silicon gate power field effect transistor specifically designed
for use with logic level (5 volt) driving sources in applications
such as programmable controllers, automotive switching,
and solenoid drivers. This performance is accomplished
through a special gate oxide design which provides full rated
conduction at gate biases in the 3-5 volt range, thereby
facilitating true on-off power control from logic circuit supply
voltages.
Formerly developmental type TA09804.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP15N08L
TO-220AB
RFP15N08L
NOTE: When ordering, use the entire part number.
Features
• 15A, 80V
• rDS(ON) = 0.140
• Design Optimized for 5 Volt Gate Drive
• Can be Driven Directly from Q-MOS, N-MOS,
TTL Circuits
• SOA is Power Dissipation Limited
• 175oC Rated Junction Temperature
• Logic Level Gate
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Packaging
JEDEC TO-220AB
G
S
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
6-234
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP15N08L Datasheet

15A/ 80V/ 0.140 Ohm/ Logic Level/ N-Channel Power MOSFET

No Preview Available !

RFP15N08L pdf
RFP15N08L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Maximum Power
Derated above
Dissipation
25oC. . . . .
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Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFP15N08L
80
80
±10
15
40
72
0.48
-55 to 175
300
260
UNITS
V
V
V
A
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Voltage
Drain to Source On Resistance (Note 2)
Forward Transconductance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate Charge at 5V
Threshold Gate Charge
Thermal Resistance Junction to Case
BVDSS ID = 1mA, VGS = 0V
VGS(TH)
IDSS
VGS = VDS, ID = 1mA
TC = 25oC, VDS = 65V, VGS = 0V
TC = 125oC, VDS = 65V, VGS = 0V
IGSS
VGS = 10V, VDS = 0V
VDS(ON) ID = 7.5A, VGS = 5V
ID = 15A, VGS = 5V
rDS(ON) ID = 7.5A, VGS = 5V
V(plateau) VDS = 15V, ID = 15A
td(ON)
tr
VDD = 40V, ID = 7.5A, RGS = 6.25Ω,
VGS = 5V
td(OFF)
tf
Qg(TOT) VGS = 0-10V
Qg(5)
VGS = 0-5V
VDD = 64V,
ID = 15A,
RL = 4.27
Qg(TH) VGS = 0-1V
RθJC
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
VSD
ISD = 7.5A
Diode Reverse Recovery Time
trr ISD = 4A, dISD/dt = 100A/µs
NOTES:
2. Pulsed: pulse duration = 300µs maximum, duty cycle = 2%.
3. Repititive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
80 - - V
1 - 2.5 V
--
1 µA
- - 50 µA
- - 100 nA
- - 1.05 V
- - 3.0 V
- - 0.140
- - 4.5 V
- - 40 ns
- - 325 ns
- - 325 ns
- - 325 ns
- - 80 nC
- - 45 nC
--
3 nC
- - 2.083 oC/W
MIN TYP MAX UNITS
- - 1.4 V
- 225 -
ns
6-235


Part Number RFP15N08L
Description 15A/ 80V/ 0.140 Ohm/ Logic Level/ N-Channel Power MOSFET
Maker Intersil Corporation
Total Page 5 Pages
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