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Intersil Electronic Components Datasheet

RFP10N15 Datasheet

10A/ 150V/ 0.300 Ohm/ N-Channel Power MOSFETs

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RFP10N15 pdf
Data Sheet
RFP10N15
March 1999 File Number 1445.3
10A, 150V, 0.300 Ohm, N-Channel Power
MOSFETs
These are N-channel enhancement-mode silicon-gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09192.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP10N15
TO-220AB
RFP10N15
NOTE: When ordering, include the entire part number.
Features
• 10A, 150V
• rDS(ON) = 0.300
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP10N15 Datasheet

10A/ 150V/ 0.300 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFP10N15 pdf
RFP10N15
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP10N15
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
150
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
150
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
10
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
25
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60
0.48
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance(Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
BVDSS ID = 250µA, VGS = 0
150 -
-
V
VGS(TH) VGS = VDS, ID = 250µA, (Figure 8)
2-4
V
IDSS
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, TC = 125oC
-
-
- 1 µA
- 25 mA
IGSS
VGS = ±20V, VDS = 0
- - ±100 nA
rDS(ON) ID = 10A, VGS = 10V, (Figures 6, 7)
-
- 0.300
VDS(ON) ID = 10A, VGS = 10V
-
- 3.0
V
td(ON)
tr
ID 5A, VDD = 75V, RG = 50Ω,
VGS = 10V, RL = 14.7
(Figures 10, 11, 12)
- 40 60 ns
- 165 250 ns
td(OFF)
- 90 135 ns
tf - 90 135 ns
CISS
COSS
VGS = 0V, VDS = 25V,
f = 1MHz, (Figure 9)
- - 850 pF
- - 230 pF
CRSS
RFP10N15
- - 100 pF
- - 2.083 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 5A
Diode Reverse Recovery Time
trr ISD = 4A, dISD/dt = 100A/µs
NOTES:
2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN TYP MAX UNITS
-
- 1.4
V
- 200 -
ns
2


Part Number RFP10N15
Description 10A/ 150V/ 0.300 Ohm/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 5 Pages
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