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Intersil Electronic Components Datasheet

RFM7N40 Datasheet

7A/ 350V and 400V/ 0.75 Ohm/ N-Channel Power MOSFETs

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RFM7N40 pdf
Semiconductor
July 1998
RFM7N35, RFM7N40,
RFP7N35, RFP7N40
7A, 350V and 400V, 0.75 Ohm,
N-Channel Power MOSFETs
Features
• 7A, 350V and 400V
• rDS(ON) = 0.75
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM7N35
TO-204AA
RFM7N35
RFM7N40
TO-204AA
RFM7N40
RFP7N35
TO-220AB
RFP7N35
RFP7N40
TO-220AB
RFP7N40
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17424.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
JEDEC TO-220AB
DRAIN
(TAB)
SOURCE
DRAIN
GATE
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 1536.2


Intersil Electronic Components Datasheet

RFM7N40 Datasheet

7A/ 350V and 400V/ 0.75 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFM7N40 pdf
RFM7N35, RFM7N40, RFP7N35, RFP7N40
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFM7N35
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor (Above 25oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
350
350
7
15
±20
100
0.8
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . Tpkg
-55 to 150
300
260
RFM7N40
400
400
7
15
±20
100
0.8
-55 to 150
300
260
RFP7N35
350
350
7
15
±20
75
0.6
-55 to 150
300
260
RFP7N40
400
400
7
15
±20
75
0.6
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
RFM7N35, RFP7N35
BVDSS
ID = 250µA, VGS = 0V
350 - - V
RFM7N40, RFP7N40
400 - - V
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH)
IDSS
IGSS
rDS(ON)
VDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA (Figure 8)
VDS = Rated BVDSS, TC = 25oC
VDS = 0.8 x Rated BVDSS, TC = 125oC
VGS = ±20V, VDS = 0V
ID = 7A, VGS = 10V (Figures 6, 7)
ID = 7A, VGS = 10V
VDS = 200V, ID 3.5A, RG = 50,
RL = 56, VGS = 10V
(Figures 10, 11, 12)
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 9)
RFM7N35, RFM7N40
RFP7N35, RFP7N40
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
- 4V
- 1 µA
- 25 µA
- ±100 nA
- 0.75
- 5.25 V
16 45 ns
54 75 ns
170 250
ns
62 100 ns
- 1600 pF
- 300 pF
- 200 pF
- 1.25 oC/W
- 1.67 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 7A
Reverse Recovery Time
trr ISD = 7A, dISD/dt = 100A/µs
NOTES:
2. Pulse Test: Pulse Width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
- - 1.4 V
- 870
-
ns
5-2


Part Number RFM7N40
Description 7A/ 350V and 400V/ 0.75 Ohm/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 4 Pages
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Intersil Corporation
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