http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Intersil Electronic Components Datasheet

RFM6N45 Datasheet

6A/ 450V and 500V/ 1.250 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFM6N45 pdf
Semiconductor
September 1998
RFM6N45, RFP6N45,
RFP6N50
6A, 450V and 500V, 1.250 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFM6
N45,
RFP6N4
5,
RFP6N5
0)
/Subject
(6A,
450V
and
500V,
1.250
Ohm, N-
Channel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/Creator
()
/DOCIN
Features
• 6A, 450V and 500V
• rDS(ON) = 1.250
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedence
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM6N45
TO-204AA
RFM6N45
RFP6N45
TO-204AA
RFP6N45
RFP6N50
TO-220AB
RFP6N50
NOTE: When ordering, include the entire part number.
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors specifically designed for appli-
cations such as switching regulators, switching converters,
motor drivers, relay drivers, and drivers for high power bipo-
lar switching transistors requiring high speed and low gate
drive power. These types can be operated directly from inte-
grated circuits.
Formerly developmental type TA17425.
Symbol
D
G
S
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5--1
File Number 1494.2


Intersil Electronic Components Datasheet

RFM6N45 Datasheet

6A/ 450V and 500V/ 1.250 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFM6N45 pdf
RFM6N45, RFP6N45, RFP6N50
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFM6N45 RFP6N45 RFP6N50
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kW) (Note 1). . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . Tpkg
450
450
6
15
±20
100
0.8
-55 to 150
300
260
450
450
6
15
±20
75
0.6
-55 to 150
300
260
500
500
6
15
±20
75
0.6
-55 to 150
300
260
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFM6N45, RFP6N45
BVDSS ID = 250µA, VGS = 0V
MIN TYP MAX UNITS
450 - - V
RFP6N50
Gate Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance(Note 2 )
Drain to Source On-Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH)
IDSS
IGSS
rDS(ON)
VDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA (Figure 8)
VDS = Rated BVDSS, VGS = 0V
VDS
VGS
=
=
0.8
0V,
xTCRa=te1d25BoVCDSS,
VGS = ±20V, VDS = 0V
ID = 6A, VGS = 10V, (Figures 6, 7)
ID = 6A, VGS = 10V
ID = 3A, VDD = 250V, RG = 50Ω,
VGS = 10V, RL = 81
(Figures 10, 11, 12)
VGS = 0V, VDS = 25V
f = 1MHz, (Figure 9)
RFM6N45
RFP6N45, RFP6N50
500
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-- V
-4 V
- 1 µA
- 25 µA
- ±100 nA
- 1.250
- 7.50 V
15 45
ns
40 80
ns
190 300
ns
60 100
ns
- 1500 pF
- 250 pF
- 200 pF
- 1.25 oC/W
1.67 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 3A
Diode Reverse Recovery Time
trr ISD = 4A, dISD/dt = 100A/µs
NOTES:
2. Pulsed test: Pulse width 300µs duty cycle 2%
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
- - 1.4 V
- 800 -
ns
5-2


Part Number RFM6N45
Description 6A/ 450V and 500V/ 1.250 Ohm/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 4 Pages
PDF Download
RFM6N45 pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 RFM6N45 6A/ 450V and 500V/ 1.250 Ohm/ N-Channel Power MOSFETs Intersil Corporation
Intersil Corporation
RFM6N45 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components