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Intersil Electronic Components Datasheet

RFM12N40 Datasheet

12A/ 350V and 400V/ 0.500 Ohm/ N-Channel Power MOSFETs

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RFM12N40 pdf
Semiconductor
September 1998
RFM12N35,
RFM12N40
12A, 350V and 400V, 0.500 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFM12
N35,
RFM12
N40)
/Sub-
ject
(12A,
350V
and
400V,
0.500
Ohm,
N-Chan-
nel
Power
MOS-
FETs)
/Author
()
/Key-
words
(12A,
350V
and
400V,
0.500
Ohm,
N-Chan-
nel
Power
MOS-
FETs)
/Cre-
ator ()
/DOCIN
Features
• 12A, 350V and 400V
• rDS(ON) = 0.500
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM12N35
TO-204AA
RFM12N35
RFM12N40
TO-204AA
RFM12N40
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17434.
Symbol
D
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
G
S
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 1787.1


Intersil Electronic Components Datasheet

RFM12N40 Datasheet

12A/ 350V and 400V/ 0.500 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFM12N40 pdf
RFM12N35, RFM12N40
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFM12N35
RFM12N40
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . TL
350
350
12
24
±20
150
1.2
-55 to 150
260
400
400
12
24
±20
150
1.2
-55 to 150
260
V
V
A
A
V
W
W/oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFM12N35
BVDSS ID = 250mA, VGS = 0V
RFM12N40
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH)
IDSS
IGSS
rDS(ON)
VDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA, (Figure 8)
VDS = Rated BVDSS, VGS = 0
VDS
TC =
= 0.8 x
125oC
Rated
BVDSS,
VGS
=
0,
VGS = ±20V, VDS = 0V
ID = 12A, VGS = 10V, (Figures 6, 7)
ID = 6A, VGS = 10V
ID = 12A, VGS = 10V
ID 6A, VDS = 200V, RG = 50Ω,
VGS = 10V, RL = 33Ω,
(Figures 10, 11, 12)
VGS = 0V, VDS = 25V, f = 1MHz
(Figures 9)
MIN TYP MAX UNITS
350 -
400 -
2-
--
--
-V
-V
4V
1 µA
25 µA
-
-
±100
nA
- - 0.500
-- 3 V
- - 6.0 V
- 30 50 ns
- 105 150
ns
- 480 750
ns
- 140 200
ns
-
-
3000
pF
- - 900 pF
- - 400 pF
- - 0.83 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 6A
Diode Reverse Recovery Time
trr ISD = 4A, dISD/dt = 100A/µs
NOTE:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN TYP MAX UNITS
- - 1.4 V
- 950 -
ns
5-2


Part Number RFM12N40
Description 12A/ 350V and 400V/ 0.500 Ohm/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 4 Pages
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1 RFM12N40 12A/ 350V and 400V/ 0.500 Ohm/ N-Channel Power MOSFETs Intersil Corporation
Intersil Corporation
RFM12N40 pdf






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