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Intersil Electronic Components Datasheet

RFM10N50 Datasheet

10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs

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RFM10N50 pdf
Semiconductor
September 1998
RFM10N45,
RFM10N50
10A, 450V and 500V, 0.600 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFM10
N45,
RFM10
N50)
/Subject
(10A,
450V
and
500V,
0.600
Ohm, N-
Channel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
204AA)
/Creator
()
/DOCIN
FO pdf-
mark
Features
• 10A, 450V and 500V
• rDS(ON) = 0.600
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM10N45
TO-204AA
RFM10N45
RFM10N50
TO-204AA
RFM10N50
NOTE: When ordering, include the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA17435.
Symbol
D
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
G
S
GATE (PIN 1)
SOURCE (PIN 2)
[ /Page-
Mode
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 1788.1


Intersil Electronic Components Datasheet

RFM10N50 Datasheet

10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFM10N50 pdf
RFM10N45, RFM10N50
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFM10N45 RFM10N50
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
450
500
V
Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
450
500
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
10
10
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
20
20
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150
1.2
150 W
1.2 W/oC
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
260
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
RFM10N45
BVDSS VGS = 0V, ID = 250µA
450
RFM10M50
500
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Impedance Junction to Case
VGS(TH)
IDSS
IGSS
rDS(ON)
VDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA, (Figure 8)
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 10A, (Figures 6, 7)
VGS = 10V, ID = 10A
VDS = 250, ID 5A, VGS = 10V, RG = 50Ω,
RL = 50Ω, (Figures 10, 11, 12)
VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 9)
2.0
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
-- V
-- V
- 4.0 V
- 1 µA
- 25 µA
- ±100 nA
- 0.600
6.0 V
26 60
ns
50 100 ns
525 900 ns
105 180 ns
- 3000 pF
- 600 pF
- 200 pF
- 0.83 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2) VSD ISD = 5A
Reverse Recovery Time
trr ISD = 4A, dISD/dt = 100A/µs
NOTE:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN TYP MAX UNITS
- - 1.4 V
- 950
-
ns
5-2


Part Number RFM10N50
Description 10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 4 Pages
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Intersil Corporation
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