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International Rectifier Electronic Components Datasheet

U2705 Datasheet

HEXFET POWER MOSFET

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U2705 pdf
PD- 91317C
IRLR/U2705
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Ultra Low On-Resistance
l Surface Mount (IRLR2705)
l Straight Lead (IRLU2705)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
G
D
VDSS = 55V
RDS(on) = 0.040
ID = 28A…
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
D-Pak
TO-252AA
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
28
20
110
68
0.45
± 16
110
16
6.8
5.0
-55 to + 175
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
–––
–––
–––
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
Max.
2.2
50
110
I-Pak
TO-251AA
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
4/1/03


International Rectifier Electronic Components Datasheet

U2705 Datasheet

HEXFET POWER MOSFET

No Preview Available !

U2705 pdf
IRLR/U2705
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-to-SourceLeakageCurrent
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
55 ––– ––– V
––– 0.065 ––– V/°C
––– ––– 0.040
––– ––– 0.051 W
––– ––– 0.065
1.0 ––– 2.0 V
11 ––– ––– S
––– ––– 25
µA
––– ––– 250
––– ––– 100
nA
––– ––– -100
––– ––– 25
––– ––– 5.2 nC
––– ––– 14
––– 8.9 –––
––– 100 ––– ns
––– 21 –––
––– 29 –––
––– 4.5 ––– nH
––– 7.5 –––
––– 880 –––
––– 220 –––
––– 94 –––
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 17A „
VGS = 5.0V, ID = 17A „
VGS = 4.0V, ID = 14A „
VDS = VGS, ID = 250µA
VDS = 25V, ID = 16A‡
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 16V
VGS = -16V
ID = 16A
VDS = 44V
VGS = 5.0V, See Fig. 6 and 13 „‡
VDD = 28V
ID = 16A
RG = 6.5Ω, VGS = 5.0V
RD = 1.8Ω, See Fig. 10 „‡
Between lead,
6mm (0.25in.)
from package
G
and center of die contact†
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5‡
D
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 28
A showing the
integral reverse
––– ––– 110
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 17A, VGS = 0V „
––– 76 110 ns TJ = 25°C, IF = 16A
––– 190 290 nC di/dt = 100A/µs „‡
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 610µH
RG = 25, IAS = 16A. (See Figure 12)
ƒ ISD 16A, di/dt 270A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
2
… Caculated continuous current based on maximum allowable
junction temperature; Package limitation current = 20A.
† This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
‡ Uses IRLZ34N data and test conditions.
www.irf.com


Part Number U2705
Description HEXFET POWER MOSFET
Maker International Rectifier
Total Page 10 Pages
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