| Description | Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low R θJC, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely e... |
| Features |
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HEXFET® Power MOSFET
D
IRLR2908 IRLU2908
VDSS = 80V
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
G S
RDS(on) = 28mΩ ID = 30A
Description
Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utili...
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| Datasheet |
 IRLU2908 Datasheet - 208.96KB |
