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IRHN8230 International Rectifier N-Channel Transistor

Description www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.822A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHN7230 IRHN8230 N-CHANNEL MEGA RAD HARD 200 Volt, 0.40Ω, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation ...
Features s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Herm...

Datasheet PDF File IRHN8230 Datasheet - 606.47KB

IRHN8230  






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