http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




International Rectifier Electronic Components Datasheet

IRGB6B60KDPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

IRGB6B60KDPBF pdf
www.DataSheet4U.com
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• TO-220 is available in PbF as a Lead-Free
C
G
E
n-channel
PD - 95229
IRGB6B60KDPbF
IRGS6B60KD
IRGSL6B60KD
VCES = 600V
IC = 7.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current„
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
TO-220AB
D2Pak
TO-262
IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD
Max.
600
13
7.0
26
26
13
7.0
26
± 20
90
36
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)‚
Weight
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
1.44
Max.
1.4
4.4
–––
62
40
–––
Units
°C/W
g
1
09/16/04


International Rectifier Electronic Components Datasheet

IRGB6B60KDPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

IRGB6B60KDPBF pdf
www.DataSheet4U.com
IRGB6B60KDPbF/IRGS/SL6B60KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
––– 0.3 ––– V/°C
1.5 1.80 2.20 V
––– 2.20 2.50
VGE = 0V, IC = 1.0mA, (25°C-150°C)
IC = 5.0A, VGE = 15V
5, 6,7
IC = 5.0A,VGE = 15V,
TJ = 150°C 9,10,11
VGE(th)
Gate Threshold Voltage
3.5 4.5 5.5 V VCE = VGE, IC = 250µA
9,10,11
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C) 12
gfe Forward Transconductance
––– 3.0 ––– S VCE = 50V, IC = 5.0A, PW=80µs
ICES
Zero Gate Voltage Collector Current
––– 1.0 150 µA VGE = 0V, VCE = 600V
––– 200 500
VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop
––– 1.25 1.45
––– 1.20 1.40 V
IC = 5.0A
IC = 5.0A
TJ = 150°C
8
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
SCSOA
Erec
trr
Irr
Total Gate Charge (turn-on)
––– 18.2 –––
IC = 5.0A
Gate - Emitter Charge (turn-on)
––– 1.9 ––– nC VCC = 400V
CT1
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
––– 9.2 –––
VGE = 15V
––– 110 210 µJ IC = 5.0A, VCC = 400V
CT4
Turn-Off Switching Loss
––– 135 245
VGE = 15V,RG = 100Ω, L =1.4mH
Total Switching Loss
––– 245 455
Ls = 150nH
TJ = 25°C ƒ
Turn-On Delay Time
––– 25 34
IC = 5.0A, VCC = 400V
CT4
Rise Time
––– 17 26
VGE = 15V, RG = 100L =1.4mH
Turn-Off Delay Time
––– 215 230 ns Ls = 150nH, TJ = 25°C
Fall Time
––– 13.2 22
Turn-On Switching Loss
Turn-Off Switching Loss
––– 150 260
IC = 5.0A, VCC = 400V
––– 190 300 µJ VGE = 15V,RG = 100Ω, L =1.4mH
CT4
13,15
Total Switching Loss
––– 340 560
Ls = 150nH
TJ = 150°C ƒ WF1WF2
Turn-On Delay Time
––– 28 37
IC = 5.0A, VCC = 400V
14, 16
Rise Time
––– 17 26
VGE = 15V, RG = 100L =1.4mH
CT4
Turn-Off Delay Time
––– 240 255 ns Ls = 150nH, TJ = 150°C
WF1
Fall Time
––– 18 27
WF2
Input Capacitance
––– 290 –––
VGE = 0V
Output Capacitance
––– 34 ––– pF VCC = 30V
Reverse Transfer Capacitance
––– 10 –––
f = 1.0MHz
Reverse Bias Safe Operting Area
FULL SQUARE
TJ = 150°C, IC = 26A, Vp =600V
4
VCC = 500V, VGE = +15V to 0V,RG = 100CT2
Short Circuit Safe Operting Area
10
––– –––
µs
TJ = 150°C, Vp =600V, RG = 100
VCC = 360V, VGE = +15V to 0V
CT3
WF4
Reverse Recovery energy of the diode ––– 90 175 µJ TJ = 150°C
Diode Reverse Recovery time
––– 70 80 ns VCC = 400V, IF = 5.0A, L = 1.4mH
17,18,19
20, 21
Diode Peak Reverse Recovery Current ––– 10 14 A VGE = 15V,RG = 100Ω, Ls = 150nH CT4,WF3
Note:  to „ are on page 15
2
www.irf.com


Part Number IRGB6B60KDPBF
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
Total Page 15 Pages
PDF Download
IRGB6B60KDPBF pdf
Download PDF File
IRGB6B60KDPBF pdf
View for Mobile






Related Datasheet

1 IRGB6B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier
IRGB6B60KDPBF pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components