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International Rectifier Electronic Components Datasheet

IRFZ44ESPBF Datasheet

Power MOSFET

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IRFZ44ESPBF pdf
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PD - 95572
IRFZ44ESPbF
IRFZ44ELPbF
l Advanced Process Technology
HEXFET® Power MOSFET
l Surface Mount (IRFZ44ES)
l Low-profile through-hole (IRFZ44EL)
D VDSS = 60V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.023
l Fully Avalanche Rated
l Lead-Free
G
ID = 48A
Description
S
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ44EL) is available for low-profile applications.
D 2 Pak
TO-262
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
48
34
192
110
0.71
± 20
220
29
11
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
1.4
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
07/19/04


International Rectifier Electronic Components Datasheet

IRFZ44ESPBF Datasheet

Power MOSFET

No Preview Available !

IRFZ44ESPBF pdf
www.DataSheet4U.com
IRFZ44ES/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
60 ––– ––– V VGS = 0V, ID = 250µA
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient ––– 0.063 ––– V/°C Reference to 25°C, ID = 1mA…
RDS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.023 VGS = 10V, ID = 29A „
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance
15 ––– ––– S VDS = 30V, ID = 29A…
IDSS
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250
µA VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
Qg Total Gate Charge
––– ––– 60
ID = 29A
Qgs Gate-to-Source Charge
––– ––– 13 nC VDS = 48V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 23
VGS = 10V, See Fig. 6 and 13 „…
td(on)
Turn-On Delay Time
––– 12 –––
VDD = 30V
tr
td(off)
Rise Time
Turn-Off Delay Time
–––
–––
60 –––
70 ––– ns
ID = 29A
RG = 15
tf Fall Time
––– 70 –––
RD = 1.1, See Fig. 10 „…
LS Internal Source Inductance
Between lead,
––– 7.5 ––– nH and center of die contact
Ciss Input Capacitance
––– 1360 –––
VGS = 0V
Coss Output Capacitance
––– 420 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 160 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 48
MOSFET symbol
A showing the
integral reverse
––– ––– 192
p-n junction diode.
G
D
S
––– ––– 1.3
––– 69 104
––– 177 266
V TJ = 25°C, IS = 29A, VGS = 0V „
ns TJ = 25°C, IF = 29A
nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 520µH
RG = 25, IAS = 29A. (See Figure 12)
ƒ ISD 29A, di/dt 320A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
… Uses IRFZ44E data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
2
www.irf.com


Part Number IRFZ44ESPBF
Description Power MOSFET
Maker International Rectifier
Total Page 10 Pages
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