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International Rectifier Electronic Components Datasheet

IRFR4510PbF Datasheet

Power MOSFET

No Preview Available !

IRFR4510PbF pdf
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 97784
IRFR4510PbF
IRFU4510PbF
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ.
11.1m
max.
13.9m
ID (Silicon Limited)
63A
S ID (Package Limited)
56A
D
D
S
G
DPak
IRFR4510PbF
S
D
G
IPAK
IRFU4510PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
dSingle Pulse Avalanche Energy
cAvalanche Current
cRepetitive Avalanche Energy
Thermal Resistance
RJC
RJA
Symbol
Parameter
jJunction-to-Case
iJunction-to-Ambient (PCB Mount)
RJA Junction-to-Ambient
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through ˆ are on page 11
www.irf.com
Max.
63
45
56
252
143
0.95
± 20
-55 to + 175
300
127
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
–––
Max.
1.05
50
110
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
1
05/02/12


International Rectifier Electronic Components Datasheet

IRFR4510PbF Datasheet

Power MOSFET

No Preview Available !

IRFR4510PbF pdf
IRFR/U4510PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG(int)
Internal Gate Resistance
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
100
–––
–––
2.0
–––
–––
–––
–––
–––
Min.
–––
0.10
11.1
3.0
–––
–––
–––
–––
0.61
Typ.
–––
–––
13.9
4.0
20
250
100
-100
–––
V
V/°C
m
V
μA
nA
VGS = 0V, ID = 250μA
™Reference to 25°C, ID = 5mA
fVGS = 10V, ID = 38A
VDS = VGS, ID = 100μA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
62 ––– –––
––– 54
81
––– 14 –––
––– 15 –––
––– 39 –––
––– 18 –––
––– 42 –––
––– 42 –––
––– 34 –––
––– 3031 –––
––– 213 –––
––– 104 –––
––– 255 –––
––– 478 –––
S VDS = 25V, ID = 38A
ID = 38A
fnC
VDS = 50V
VGS = 10V
ID = 38A, VDS =0V, VGS = 10V
VDD = 65V
fns
ID = 38A
RG = 7.5
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz
hVGS = 0V, VDS = 0V to 80V
gVGS = 0V, VDS = 0V to 80V
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
ton
Continuous Source Current
(Body Diode)
Pulsed Source Current
Ù(Body Diode)
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
––– ––– 56
MOSFET symbol
D
––– ––– 252
A
showing the
integral reverse
G
p-n junction diode.
S
f––– ––– 1.3
V TJ = 25°C, IS = 38A, VGS = 0V
e––– 7.0 ––– V/ns TJ = 175°C, IS = 38A, VDS = 100V
–––
–––
34
39
–––
–––
ns
TJ = 25°C
TJ = 125°C
–––
–––
47
61
–––
–––
nC
TJ = 25°C
TJ = 125°C
VR = 86V
fIF = 38A
di/dt = 100A/μs
––– 2.4 –––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com


Part Number IRFR4510PbF
Description Power MOSFET
Maker International Rectifier
Total Page 11 Pages
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International Rectifier
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