http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




International Rectifier Electronic Components Datasheet

IRFR1018EPbF Datasheet

Power MOSFET

No Preview Available !

IRFR1018EPbF pdf
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
PD - 97129
IRFR1018EPbF
IRFU1018EPbF
HEXFET® Power MOSFET
D VDSS
60V
RDS(on) typ.
7.1m:
max. 8.4m:
G
ID (Silicon Limited)
79A c
S ID (Package Limited)
56A
D-Pak
I-Pak
IRFR1018EPbF IRFU1018EPbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
TJ
TSTG
Peak Diode Recovery f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy e
Avalanche Current d
Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
RθJA
Junction-to-Case k
Junction-to-Ambient (PCB Mount) jk
Junction-to-Ambient k
Notes  through ‰ are on page 2
www.irf.com
D
Drain
Max.
79c
56c
56
315
110
0.76
± 20
21
-55 to + 175
300
S
Source
Units
A
W
W/°C
V
V/ns
°C
88
47
11
Typ.
–––
–––
–––
Max.
1.32
40
110
mJ
A
mJ
Units
°C/W
1
3/8/08


International Rectifier Electronic Components Datasheet

IRFR1018EPbF Datasheet

Power MOSFET

No Preview Available !

IRFR1018EPbF pdf
IRFR/U1018EPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
60 ––– ––– V VGS = 0V, ID = 250μA
––– 0.073 ––– V/°C Reference to 25°C, ID = 5mAd
––– 7.1 8.4 mΩ VGS = 10V, ID = 47A g
2.0 ––– 4.0 V VDS = VGS, ID = 100μA
––– ––– 20 μA VDS = 60V, VGS = 0V
––– ––– 250
VDS = 48V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
RG(int)
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Forward Transconductance
110
Total Gate Charge
–––
Gate-to-Source Charge
–––
Gate-to-Drain ("Miller") Charge
–––
Total Gate Charge Sync. (Qg - Qgd)
–––
Internal Gate Resistance
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Effective Output Capacitance (Energy Related)h –––
Effective Output Capacitance (Time Related)g –––
–––
46
10
12
34
0.73
13
35
55
46
2290
270
130
390
630
–––
69
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S VDS = 50V, ID = 47A
nC ID = 47A
VDS = 30V
VGS = 10V g
ID = 47A, VDS =0V, VGS = 10V
Ω
ns VDD = 39V
ID = 47A
RG = 10Ω
VGS = 10V g
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V i
VGS = 0V, VDS = 0V to 60V h
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) d
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 79c
––– ––– 315
A MOSFET symbol
showing the
integral reverse
D
G
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 47A, VGS = 0V g
––– 26 39 ns TJ = 25°C
VR = 51V,
––– 31 47
TJ = 125°C
––– 24 36 nC TJ = 25°C
IF = 47A
di/dt = 100A/μs g
––– 35 53
TJ = 125°C
––– 1.8 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction … Pulse width 400μs; duty cycle 2%.
temperature. Bond wire current limit is 56A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.08mH
RG = 25Ω, IAS = 47A, VGS =10V. Part not recommended for
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
use above this value.
„ I2SD 47A, di/dt 1668A/μs, VDD V(BR)DSS, TJ 175°C.
www.irf.com


Part Number IRFR1018EPbF
Description Power MOSFET
Maker International Rectifier
Total Page 10 Pages
PDF Download
IRFR1018EPbF pdf
Download PDF File
IRFR1018EPbF pdf
View for Mobile






Related Datasheet

1 IRFR1018EPbF Power MOSFET International Rectifier
International Rectifier
IRFR1018EPbF pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components