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International Rectifier Electronic Components Datasheet

IRFB9N30APBF Datasheet

POWER MOSFET

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IRFB9N30APBF pdf
l Dynamic dv/dt Rating
l Repetitive Avalanche Rated
l Fast Switching
l Ease of Paraleing
l Dynamic dv/dt Rated
l Simple Drive Requirements
l Lead-Free
PD- 95350
IRFB9N30APbF
HEXFET® Power MOSFET
D
VDSS = 300V
RDS(on) = 0.45
G
ID = 9.3A
S
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of ast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at lower dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
9.3
5.9
37
96
0.77
± 30
160
9.3
9.6
4.6
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
1.3
–––
62
Units
°C/W
1
06/01/04


International Rectifier Electronic Components Datasheet

IRFB9N30APBF Datasheet

POWER MOSFET

No Preview Available !

IRFB9N30APBF pdf
IRFB9N30APbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
Input Capacitance
Input Capacitance
300 ––– –––
––– 0.38 –––
––– ––– 0.45
2.0 ––– 4.0
6.6 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 33
––– ––– 6.9
––– ––– 12
––– 10 –––
––– 25 –––
––– 35 –––
––– 29 –––
––– 4.5 –––
––– 7.5 –––
––– 920 –––
––– 160 –––
––– 8.7 –––
––– 1200 –––
––– 52 –––
––– 102 –––
V
V/°C
V
S
µA
nA
nC
ns
nH
pF
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 5.5A „
VDS = VGS, ID = 250µA
VDS = 50V, ID = 5.6A
VDS = 300V, VGS = 0V
VDS = 240V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
ID = 9.3A
VDS = 240V
VGS = 10V, See Fig. 6 and 13 „
VDD = 150V
ID = 9.3A
RG = 12
RD = 16 , See Fig. 10 „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
S
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0 MHz
VGS = 0V, VDS = 240V, ƒ = 1.0 MHz
VGS = 0V, VDS = 0V to 240 V …
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 9.3
––– ––– 37
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS =9.3A, VGS = 0V „
––– 280 420 ns TJ = 25°C, IF = 9.3A
––– 1.5 2.3 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 3.7mH
RG = 25, IAS = 9.3A. (See Figure 12)
ƒ ISD 9.3A, di/dt 270A/µs, VDD V(BR)DSS,
TJ 150°C
2
„ Pulse width 300µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
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Part Number IRFB9N30APBF
Description POWER MOSFET
Maker International Rectifier
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