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International Rectifier Electronic Components Datasheet

IRF7702PbF Datasheet

Power MOSFET

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IRF7702PbF pdf
l Ultra Low On-Resistance
l -1.8V Rated
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile ( < 1.1mm)
l Available in Tape & Reel
l Lead-Free
PD-96027
IRF7702PbF
VDSS
-12V
HEXFET® Power MOSFET
RDS(on) max
0.014@VGS = -4.5V
0.019@VGS = -2.5V
0.027@VGS = -1.8V
ID
-8.0A
-7.0A
-5.8A
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
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The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
9'
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%
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Max.
-12
±8.0
±7.0
±70
1.5
0.96
0.01
± 8.0
-55 to + 150
TSSOP-8
Units
V
A
W
W/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
83
Units
°C/W
1
02/06/06


International Rectifier Electronic Components Datasheet

IRF7702PbF Datasheet

Power MOSFET

No Preview Available !

IRF7702PbF pdf
IRF7702PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
-12 ––– –––
––– -0.007 –––
––– ––– 0.014
––– ––– 0.019
––– ––– 0.027
V
V/°C
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -8.0A ‚
VGS = -2.5V, ID = -7.0A ‚
VGS = -1.8V, ID = -5.8A ‚
VGS(th)
Gate Threshold Voltage
-0.45 ––– -1.2 V VDS = VGS, ID = -250µA
gfs Forward Transconductance
26 ––– ––– S VDS = -10V, ID = -8.0A
IDSS Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– -25
µA
VDS = -12V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -8.0V
––– ––– 100 nA VGS = 8.0V
Qg Total Gate Charge
––– 54 81
ID = -8.0A
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
––– 7.8 12
––– 15 23
nC VDS = -9.6V
VGS = -4.5V‚
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 16 ––– ns VDD = -6.0V
––– 21 –––
ID = -1.0A
––– 320 –––
RD = 6.0
––– 250 –––
RG = 6.0‚
Ciss Input Capacitance
Coss Output Capacitance
––– 3470 –––
––– 1040 –––
VGS = 0V
pF VDS = -10V
Crss Reverse Transfer Capacitance
––– 670 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
58
41
Max.
-1.5
-70
-1.2
87
62
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.5A, VGS = 0V ‚
TJ = 25°C, IF = -1.5A
di/dt = 100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 300µs; duty cycle 2%.
ƒ When mounted on 1 inch square copper board, t<10 sec
2 www.irf.com


Part Number IRF7702PbF
Description Power MOSFET
Maker International Rectifier
Total Page 8 Pages
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