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International Rectifier Electronic Components Datasheet

IRF1018ESPbF Datasheet

Power MOSFET

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IRF1018ESPbF pdf
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
PD - 97125
IRF1018EPbF
IRF1018ESPbF
IRF1018ESLPbF
HEXFET® Power MOSFET
D VDSS
60V
RDS(on) typ.
7.1m:
G max. 8.4m:
S ID
79A
D
DS
G
TO-220AB
IRF1018EPbF
G
Gate
D
D
DS
G
D2Pak
IRF1018ESPbF
DS
G
TO-262
IRF1018ESLPbF
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current c
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Peak Diode Recovery e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw k
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy d
Avalanche Current c
Repetitive Avalanche Energy f
Thermal Resistance
Symbol
Parameter
RθJC
RθCS
RθJA
RθJA
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Junction-to-Case j
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220 j
Junction-to-Ambient (PCB Mount) , D2Pak ij
Max.
79
56
315
110
0.76
± 20
21
-55 to + 175
300
10lbxin (1.1Nxm)
88
47
11
Typ.
–––
0.50
–––
–––
Max.
1.32
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
2/28/08


International Rectifier Electronic Components Datasheet

IRF1018ESPbF Datasheet

Power MOSFET

No Preview Available !

IRF1018ESPbF pdf
IRF1018E/S/SLPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
60 ––– –––
––– 0.073 –––
––– 7.1 8.4
2.0 ––– 4.0
––– ––– 20
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 5mAc
mΩ VGS = 10V, ID = 47A f
V VDS = VGS, ID = 100μA
μA VDS = 60V, VGS = 0V
IGSS Gate-to-Source Forward Leakage
––– ––– 250
––– ––– 100
VDS = 48V, VGS = 0V, TJ = 125°C
nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
RG(int)
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Forward Transconductance
110
Total Gate Charge
–––
Gate-to-Source Charge
–––
Gate-to-Drain ("Miller") Charge
–––
Total Gate Charge Sync. (Qg - Qgd)
–––
Internal Gate Resistance
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Effective Output Capacitance (Energy Related)h –––
Effective Output Capacitance (Time Related)g –––
–––
46
10
12
34
0.73
13
35
55
46
2290
270
130
390
630
–––
69
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S VDS = 50V, ID = 47A
nC ID = 47A
VDS = 30V
VGS = 10V f
ID = 47A, VDS =0V, VGS = 10V
Ω
ns VDD = 39V
ID = 47A
RG = 10Ω
VGS = 10V f
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V h
VGS = 0V, VDS = 0V to 60V g
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) c
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 79 A MOSFET symbol
––– ––– 315
showing the
integral reverse
G
D
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 47A, VGS = 0V f
––– 26 39 ns TJ = 25°C
VR = 51V,
––– 31 47
TJ = 125°C
––– 24 36 nC TJ = 25°C
IF = 47A
di/dt = 100A/μs f
––– 35 53
TJ = 125°C
––– 1.8 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.08mH
RG = 25Ω, IAS = 47A, VGS =10V. Part not recommended for
use above this value.
ƒ ISD 47A, di/dt 1668A/μs, VDD V(BR)DSS, TJ 175°C.
„ Pulse width 400μs; duty cycle 2%.
2
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ Rθ is measured at TJ approximately 90°C.
‰ This is only applied to TO-220
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Part Number IRF1018ESPbF
Description Power MOSFET
Maker International Rectifier
Total Page 11 Pages
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