| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. IRF7313P... |
| Features |
fra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TA = 25°C TA = 70°C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Maximum Power Dissipation
TA = 25°C TA =...
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| Datasheet |
 F7313 Datasheet - 213.47KB |
