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International Rectifier Electronic Components Datasheet

AUIRLR2905 Datasheet

HEXFET Power MOSFET

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AUIRLR2905 pdf
AUTOMOTIVE GRADE
AUIRLR2905
AUIRLU2905
• Advanced Planar Technology
• Logic-Level Gate Drive
• Low On-Resistance
• Dynamic dV/dT Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified
G
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
HEXFET® Power MOSFET
D V(BR)DSS
55V
RDS(on) max.
27m
S ID
42A
D
S
G
D-Pak
AUIRLRU2905
S
D
I-Pak G
AUIRLU2905
G
Gate
D
Drain
S
Source
Base part number Package Type
Standard Pack
Complete Part Number
AUIRLR2905
AUIRLU2905
Dpak
Ipak
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
Quantity
75
2000
3000
3000
75
AUIRLR2905
AUIRLR2905TR
AUIRLR2905TRL
AUIRLR2905TRR
AUIRLU2905
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
42
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
Power Dissipation
Linear Derating Factor
30 A
160
110 W
0.71 W/°C
VGS
EAS
EAS (tested )
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
™Repetitive Avalanche Energy
± 16 V
210 mJ
200
25 A
11 mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
-55 to + 175
300
°C
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2012 International Rectifier
June 5, 2012 PD-97623A


International Rectifier Electronic Components Datasheet

AUIRLR2905 Datasheet

HEXFET Power MOSFET

No Preview Available !

AUIRLR2905 pdf
AUIRLR/U2905
Thermal Resistance
Parameter
hRJC
Junction-to-Case
gRJA Junction-to-Ambient (PCB mount)
Typ.
–––
–––
Max.
1.4
50
Units
°C/W
RJA
Junction-to-Ambient
––– 110
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– ––– V VGS = 0V, ID = 250μA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.070 ––– V/°C Reference to 25°C, ID = 1mA
f––– ––– 0.027
VGS = 10V, ID = 25A
fRDS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.030 VGS = 5.0V, ID = 25A
f––– ––– 0.040
VGS = 4.0V, ID = 21A
VGS(th)
Gate Threshold Voltage
1.0 ––– 2.0
V VDS = VGS, ID = 250μA
gfs Forward Transconductance
21 ––– ––– S VDS = 25V, ID = 25A
IDSS
Drain-to-Source Leakage Current
––– ––– 25 μA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 44V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 16V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– ––– 48
ID = 25A
Qgs Gate-to-Source Charge
––– ––– 8.6 nC VDS = 44V
fQgd
Gate-to-Drain ("Miller") Charge
––– ––– 25
VGS = 5.0V
td(on)
Turn-On Delay Time
––– 11 –––
VDD = 28V
tr Rise Time
––– 84 –––
ID = 25A
td(off)
Turn-Off Delay Time
tf Fall Time
LD Internal Drain Inductance
f––– 26 ––– ns RG = 3.4
––– 15 –––
VGS = 5.0V, RD = 1.1
––– 4.5 –––
Between lead,
D
nH 6mm (0.25in.)
LS
Internal Source Inductance
––– 7.5 –––
from package
G
and center of die contact
S
Ciss Input Capacitance
––– 1700 –––
VGS = 0V
Coss Output Capacitance
––– 400 –––
VDS = 25V
Crss Reverse Transfer Capacitance
Diode Characteristics
––– 150 ––– pF ƒ = 1.0MHz, See Fig. 5
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 42
MOSFET symbol
D
(Body Diode)
A showing the
ISM
VSD
dv/dt
trr
Qrr
ton
Pulsed Source Current
Ù(Body Diode)
eDiode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 160
integral reverse
G
––– ––– 1.3
fp-n junction diode.
S
V TJ = 25°C, IS = 25A, VGS = 0V
––– 5.0 ––– V/ns TJ = 175°C, IS = 25A, VDS = 55V
f––– 80 120 ns TJ = 25°C, IF = 25A
––– 210 320 nC di/dt = 100A/μs
Intrins icturn-on timeis negligible(turn-on is dominatedbyLS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L =470μH
RG = 25, IAS = 25A. (See Figure 12)
ƒ ISD 25A, di/dt 270A/μs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300μs; duty cycle 2%.
… When mounted on 1" square PCB (FR-4 or G-10
Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
† Ris measured at Tj approximately 90°C.
2 www.irf.com © 2012 International Rectifier
June 6, 2012


Part Number AUIRLR2905
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 11 Pages
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