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International Rectifier Electronic Components Datasheet

AUIRFR5305 Datasheet

AUTOMOTIVE MOSFET

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AUIRFR5305 pdf
AUTOMOTIVE MOSFET
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
D
G
S
D
PD-96341
AUIRFR5305
AUIRFU5305
HEXFET® Power MOSFET
V(BR)DSS
-55V
RDS(on) max. 0.065
ID -31A
D
Description
Specifically designed for Automotive applications, this Cellular
Planar design of HEXFET® Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
S
D
G
D-Pak
AUIRFR5305
S
D
G
I-Pak
AUIRFU5305
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
™hPulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dhSingle Pulse Avalanche Energy (Thermally limited)
ÙhAvalanche Current
™Repetitive Avalanche Energy
ÃehPeak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient (PCB mount) ∗∗
RθJA Junction-to-Ambient ***
Max.
-31
-22
-110
110
0.71
± 20
280
-16
11
-5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
12/06/10
Free Datasheet http://www.datasheet4u.com/


International Rectifier Electronic Components Datasheet

AUIRFR5305 Datasheet

AUTOMOTIVE MOSFET

No Preview Available !

AUIRFR5305 pdf
AUIRFR/U5305
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max.
V(BR)DSS
Drain-to-Source Breakdown Voltage
-55 ––– –––
V(BR)DSS/TJ
RDS(on)
VGS(th)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
-0.034
–––
––– ––– 0.065
-2.0 ––– -4.0
gfs Forward Transconductance
8.0 ––– –––
IDSS
Drain-to-Source Leakage Current
––– ––– -25
––– ––– -250
IGSS
Gate-to-Source Forward Leakage
––– ––– 100
Gate-to-Source Reverse Leakage
––– ––– -100
Units
V
V/°C
V
S
µA
nA
Conditions
VGS = 0V, ID = -250µA
fReference to 25°C, ID = -1mA
VGS = -10V, ID = -16A
hVDS = VGS, ID = -250µA
VDS = -25V, ID = -16A
VDS = -55V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 150°C
VGS = -20V
VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max.
Qg Total Gate Charge
––– ––– 63
Qgs Gate-to-Source Charge
––– ––– 13
Qgd
Gate-to-Drain ("Miller") Charge
––– ––– 29
td(on) Turn-On Delay Time
––– 14 –––
tr Rise Time
––– 66 –––
td(off)
Turn-Off Delay Time
––– 39 –––
tf Fall Time
––– 63 –––
LD Internal Drain Inductance
––– 4.5 –––
LS Internal Source Inductance
––– 7.5 –––
Ciss Input Capacitance
–––
1200
–––
Coss Output Capacitance
––– 520 –––
Crss
Reverse Transfer Capacitance
––– 250 –––
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
71
170
Max.
-31
-110
-1.3
110
250
Units
nC
ns
nH
pF
Conditions
ID = -16A
fhVDS = -44V
VGS = -10V See Fig.6 and 13
VDD = -28V
ID = -16A
fhRG = 6.8
RD = 1.6 See Fig.10
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
hVDS = -25V
ƒ = 1.0MHz,see Fig.5
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
fTJ = 25°C, IS = -16A, VGS = 0V
fhTJ = 25°C, IF = -16A
di/dt = 100A/µs
 Repetitive rating; pulse width limited by
„ Pulse width 300µs; duty cycle 2%.
max. junction temperature. (See Fig. 11)
‚ VDD = -25V, starting TJ = 25°C, L = 2.1mH
RG = 25, IAS = -16A. (See Figure 12)
… This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
† Uses IRF5305 data and test conditions.
ƒ ISD -16A, di/dt -280A/µs, VDD V(BR)DSS,
TJ 175°C
* *When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
*** Uses typical socket mount.
2 www.irf.com
Free Datasheet http://www.datasheet4u.com/


Part Number AUIRFR5305
Description AUTOMOTIVE MOSFET
Maker International Rectifier
Total Page 13 Pages
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