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Intel Corporation
Intel Corporation

E28F020-120 Datasheet Preview

E28F020-120 Datasheet

28F020 2048K (256K X 8) CMOS FLASH MEMORY

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E28F020-120 pdf
E
28F020 2048K (256K X 8) CMOS
FLASH MEMORY
n Flash Electrical Chip-Erase
2 Second Typical Chip-Erase
n Quick-Pulse Programming Algorithm
10 µS Typical Byte-Program
4 second Chip-Program
n 100,000 Erase/Program Cycles
n 12.0 V ±5% VPP
n High-Performance Read
90 ns Maximum Access Time
n CMOS Low Power Consumption
10 mA Typical Active Current
50 µA Typical Standby Current
0 Watts Data Retention Power
n Integrated Program/Erase Stop Timer
n Command Register Architecture for
Microprocessor/Microcontroller
Compatible Write Interface
n Noise Immunity Features
±10% VCC Tolerance
Maximum Latch-Up Immunity
through EPI Processing
n ETOX™ Nonvolatile Flash Technology
EPROM-Compatible Process Base
High-Volume Manufacturing
Experience
n JEDEC-Standard Pinouts
32-Pin Plastic Dip
32-Lead PLCC
32-Lead TSOP
(See Packaging Spec., Order #231369)
n Extended Temperature Options
Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write
random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar
EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-
board during subassembly test; in-system during final test; and in-system after sale. The 28F020 increases
memory flexibility, while contributing to time and cost savings.
The 28F020 is a 2048-kilobit nonvolatile memory organized as 262,144 bytes of eight bits. Intel’s 28F020 is
offered in 32-pin plastic DIP, 32-lead PLCC, and 32-lead TSOP packages. Pin assignments conform to
JEDEC standards for byte-wide EPROMs.
Extended erase and program cycling capability is designed into Intel’s ETOX™ (EPROM Tunnel Oxide)
process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field
combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V VPP supply, the
28F020 performs 100,000 erase and program cycles—well within the time limits of the quick-pulse
programming and quick-erase algorithms.
Intel’s 28F020 employs advanced CMOS circuitry for systems requiring high-performance access speeds,
low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance
for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates
into power savings when the device is deselected. Finally, the highest degree of latch-up protection is
achieved through Intel’s unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA
on address and data pins, from –1 V to VCC + 1 V.
With Intel’s ETOX process technology base, the 28F020 builds on years of EPROM experience to yield the
highest levels of quality, reliability, and cost-effectiveness.
December 1997
Order Number: 290245-009




Intel Corporation
Intel Corporation

E28F020-120 Datasheet Preview

E28F020-120 Datasheet

28F020 2048K (256K X 8) CMOS FLASH MEMORY

No Preview Available !

E28F020-120 pdf
Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or
otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of
Sale for such products, Intel assumes no liability whatsoever, and Intel disclaims any express or implied warranty, relating to
sale and/or use of Intel products including liability or warranties relating to fitness for a particular purpose, merchantability, or
infringement of any patent, copyright or other intellectual property right. Intel products are not intended for use in medical, life
saving, or life sustaining applications.
Intel may make changes to specifications and product descriptions at any time, without notice.
The 28F020 may contain design defects or errors known as errata. Current characterized errata are available on request.
Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be
obtained from:
Intel Corporation
P.O. Box 5937
Denver, CO 80217-9808
or call 1-800-548-4725
or visit Intel’s website at http://www.intel.com
Copyright © Intel Corporation 1996, 1997.
* Third-party brands and names are the property of their respective owners.




Intel Corporation
Intel Corporation

E28F020-120 Datasheet Preview

E28F020-120 Datasheet

28F020 2048K (256K X 8) CMOS FLASH MEMORY

No Preview Available !

E28F020-120 pdf
E
28F020
CONTENTS
PAGE
1.0 APPLICATIONS ..............................................5
2.0 PRINCIPLES OF OPERATION .......................8
2.1 Integrated Stop Timer ..................................8
2.2 Write Protection ...........................................9
2.2.1 Bus Operations......................................9
2.2.1.1 Read...............................................9
2.2.1.2 Output Disable ..............................10
2.2.1.3 Standby ........................................10
2.2.1.4 Intelligent Identifier Operation .......10
2.2.1.5 Write .............................................10
2.2.2 Command Definitions ..........................10
2.2.2.1 Read Command............................11
2.2.2.2 Intelligent Identifier Command ......11
2.2.2.3 Set-Up Erase/Erase Commands...12
2.2.2.4 Erase Verify Command.................12
2.2.2.5 Set-Up Program/Program
Commands ..................................12
2.2.2.6 Program Verify Command ............12
2.2.2.7 Reset Command...........................13
2.2.3 Extended Erase/Program Cycling........13
2.2.4 Quick-Pulse Programming Algorithm ...13
2.2.5 Quick-Erase Algorithm.........................13
3.0 DESIGN CONSIDERATIONS ........................16
3.1 Two-Line Output Control ............................16
3.2 Power Supply Decoupling ..........................16
3.3 VPP Trace on Printed Circuit Boards...........16
3.4 Power-Up/Down Protection ........................16
3.5 28F020 Power Dissipation .........................16
PAGE
4.0 ELECTRICAL SPECIFICATIONS..................18
4.1 Absolute Maximum Ratings........................18
4.2 Operating Conditions..................................18
4.3 Capacitance ...............................................18
4.4 DC Characteristics—TTL/NMOS
Compatible—Commercial Products...........19
4.5 DC Characteristics—CMOS Compatible—
Commercial Products ................................20
4.6 DC Characteristics—TTL/NMOS
Compatible—Extended Temperature
Products ....................................................22
4.7 DC Characteristics—CMOS Compatible—
Extended Temperature Products...............24
4.8 AC Characteristics—Read Only
Operations—Commercial and Extended
Temperature Products...............................28
4.9 AC Characteristics—Write/Erase/Program
Only Operations—Commercial and
Extended Temperature Products...............30
4.10 Erase and Programming Performance.....31
4.11 AC Characteristics—Alternate CE#
Controlled Writes—Commercial and
Extended Temperature Products...............35
5.0 ORDERING INFORMATION.........................38
6.0 ADDITIONAL INFORMATION ......................38
3




Part Number E28F020-120
Description 28F020 2048K (256K X 8) CMOS FLASH MEMORY
Maker Intel Corporation
Total Page 30 Pages
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