| Description | BFP540F NPN Silicon RF Transistor • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET to p v ie w 4 3 3 4 XYs 2 1 TSFP-4 45 - Line A T s 1 2 d ir e c tio n o f u n r e e lin g ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP540F Marking ATs* 1=B Pin Config... |
| Features |
tor lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance
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Jan-28-2004
BFP540F
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 14 V, VBE ...
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| Datasheet |
 BFP540F Datasheet - 189.38KB |
