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Infineon Technologies Electronic Components Datasheet

70N10L Datasheet

SPI70N10L

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70N10L pdf
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Preliminary data
SPI70N10L
SPP70N10L,SPB70N10L
SIPMOS=Power-Transistor
Feature
 N-Channel
 Enhancement mode
 Logic Level
175°C operating temperature
P-TO262-3-1
 Avalanche rated
 dv/dt rated
Product Summary
VDS 100 V
RDS(on) 16 m
ID 70 A
P-TO263-3-2
P-TO220-3-1
Type
SPP70N10L
SPB70N10L
SPI70N10L
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67040-S4175
Q67040-S4170
Q67060-S7428
Marking
70N10L
70N10L
70N10L
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TC=25°C
TC=100°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=70 A , VDD=25V, RGS=25
Avalanche energy, periodic limited by Tjmax
ID puls
EAS
EAR
Reverse diode dv/dt
dv/dt
IS=70A, VDS=0V, di/dt=200A/µs
Gate source voltage
VGS
Power dissipation
TC=25°C
Ptot
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Page 1
Value
70
50
280
Unit
A
700 mJ
25
6 kV/µs
±20 V
250 W
-55... +175
55/175/56
°C
2001-08-24



Infineon Technologies Electronic Components Datasheet

70N10L Datasheet

SPI70N10L

No Preview Available !

70N10L pdf
www.DataSheet4U.com
Preliminary data
Thermal Characteristics
Parameter
Symbol
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
RthJC
RthJA
RthJA
SPI70N10L
SPP70N10L,SPB70N10L
Values
Unit
min. typ. max.
- - 0.6 K/W
- - 62.5
- - 62
- - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS 100
-
-
VGS=0V, ID=2mA
Gate threshold voltage, VGS = VDS
ID = 2 mA
Zero gate voltage drain current
VDS=100V, VGS=0V, Tj=25°C
VDS=100V, VGS=0V, Tj=150°C
Gate-source leakage current
VGS(th) 1.2 1.6
2
IDSS
IGSS
- 0.1 1
- - 100
- 10 100
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=50A
Drain-source on-state resistance
VGS=10V, ID=50A
RDS(on) - 14 25
RDS(on) - 10 16
Unit
V
µA
nA
m
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2001-08-24



Infineon Technologies Electronic Components Datasheet

70N10L Datasheet

SPI70N10L

No Preview Available !

70N10L pdf
www.DataSheet4U.com
Preliminary data
SPI70N10L
SPP70N10L,SPB70N10L
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
min.
Dynamic Characteristics
Transconductance
gfs
VDS 2*ID*RDS(on)max ,
30
ID =50A
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VGS=0V, VDS=25V,
f=1MHz
VDD=50V, VGS=4.5V,
ID=70A, RG=1.3
-
-
-
-
-
-
-
Values
typ. max.
65 -
3630
640
345
70
250
250
95
4540
800
430
105
375
375
145
Unit
S
pF
ns
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs VDD=80V, ID=70A
Qgd
Qg VDD=80V, ID=70A,
VGS=0 to 10V
V(plateau) VDD=80V, ID=70A
Reverse Diode
Inverse diode continuous
forward current
IS
TC=25°C
Inverse diode direct current,
pulsed
ISM
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
VSD
trr
Qrr
VGS=0V, IF=140A
VR=50V, IF=lS,
diF/dt=100A/µs
- 10 15 nC
- 34 51
- 160 240
- 3.22 - V
- - 70 A
- - 280
- 1.2 1.8 V
- 100 150 ns
- 600 900 nC
Page 3
2001-08-24




Part Number 70N10L
Description SPI70N10L
Maker Infineon Technologies
Total Page 8 Pages
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70N10L pdf
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