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Infineon Technologies Electronic Components Datasheet

60R385CP Datasheet

IPD60R385CP

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60R385CP pdf
CoolMOS® Power Transistor
Features
• Worldwide best R ds,on in TO252
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max
Q g,typ
IPD60R385CP
650 V
0.385
17 nC
PG-TO252
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Type
IPD60R385CP
Package
PG-TO252
Ordering Code
SP000307381
Marking
6R385P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
ID
I D,pulse
T C=25 °C
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
I D=3.4 A, V DD=50 V
I D=3.4 A, V DD=50 V
V DS=0...480 V
Gate source voltage
V GS static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Value
9.0
5.7
27
227
0.3
3
50
±20
±30
83
-55 ... 150
www.DRateavS.he2e.t24U.net
page 1
Unit
A
mJ
A
V/ns
V
W
°C
2009-04-15



Infineon Technologies Electronic Components Datasheet

60R385CP Datasheet

IPD60R385CP

No Preview Available !

60R385CP pdf
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
Parameter
Symbol Conditions
IPD60R385CP
Value
5.2
27
15
Unit
A
V/ns
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
Soldering temperature,
reflowsoldering
T sold
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm2 cooling
area5)
reflow MSL3
Electrical characteristics, at T j=25 °C, unless otherwise specified
-
-
-
-
- 1.5 K/W
- 62
35 -
- 260 °C
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-V
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V GS(th) V DS=V GS, I D=0.34 mA 2.5
I DSS
I GSS
R DS(on)
RG
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
V GS=20 V, V DS=0 V
V GS=10 V, I D=5.2 A,
T j=25 °C
V GS=10 V, I D=5.2 A,
T j=150 °C
f =1 MHz, open drain
-
-
-
-
-
-
3 3.5
- 1 µA
10 -
- 100 nA
0.35 0.385
0.94
1.8
-
-
Rev. 2.2
page 2
2009-04-15



Infineon Technologies Electronic Components Datasheet

60R385CP Datasheet

IPD60R385CP

No Preview Available !

60R385CP pdf
IPD60R385CP
Parameter
Symbol Conditions
Dynamic characteristics
Input capacitance
C iss
Output capacitance
Effective output capacitance, energy
related6)
Effective output capacitance, time
related7)
C oss
C o(er)
C o(tr)
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=5.2 A,
R G=3.3
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Q gs
Q g(th)
Q gd
Q sw
Qg
V plateau
V DD=400 V, I D=5.2 A,
V GS=0 to 10 V
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
Unit
max.
790 - pF
38 -
36 -
96 -
10 - ns
5-
40 -
5-
0
4 - nC
4.6 6.2
6-
12 17
17 22
5.0 - V
Reverse Diode
Diode forward voltage
V SD
V GS=0 V, I F=5.2 A,
T j=25 °C
- 0.9 1.2 V
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 260 - ns
- 3.1 - µC
- 24 - A
1) J-STD20 and JESD22
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
4) ISDID, di/dt400A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch
5) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection.
PCB is without blown air.
6) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.2
page 3
2009-04-15




Part Number 60R385CP
Description IPD60R385CP
Maker Infineon Technologies
Total Page 10 Pages
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