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Infineon Technologies Electronic Components Datasheet

08N80C3 Datasheet

SPP08N80C3

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08N80C3 pdf
CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
Product Summary
V DS
R DS(on)max @ Tj = 25°C
Q g,typ
SPP08N80C3
800 V
0.65
45 nC
PG-TO220-3
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application (i.e. active clamp forward)
Type
SPP08N80C3
Package
PG-TO220-3
Marking
08N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current2)
I D,pulse
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
Gate source voltage
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=1.6 A, V DD=50 V
I D=8 A, V DD=50 V
V DS=0…640 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Mounting torque
M3 and M3.5 screws
Rev. 2.91
page 1
Value
8
5.1
24
340
0.2
8
50
±20
±30
104
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2011-09-27


Infineon Technologies Electronic Components Datasheet

08N80C3 Datasheet

SPP08N80C3

No Preview Available !

08N80C3 pdf
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
SPP08N80C3
Value
8
24
4
Unit
A
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
leaded
Soldering temperature,
wave soldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10s
min.
Values
typ.
Unit
max.
- - 1.2 K/W
- - 62
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
V (BR)DS V GS=0 V, I D=8 A
V GS(th) V DS=V GS, I D=0.47 mA
800
-
2.1
I DSS
V DS=800 V, V GS=0 V,
T j=25 °C
-
V DS=800 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=5.1 A,
T j=25 °C
-
-
-
V GS=10 V, I D=5.1 A,
T j=150 °C
-
R G f =1 MHz, open drain -
- -V
870 -
3 3.9
- 20 µA
100 -
- 100 nA
0.56 0.65
1.5 -
1.2 -
Rev. 2.91
page 2
2011-09-27


Part Number 08N80C3
Description SPP08N80C3
Maker Infineon Technologies
Total Page 10 Pages
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