http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Infineon Technologies Electronic Components Datasheet

05N03L Datasheet

IPB05N03L

No Preview Available !

05N03L pdf
OptiMOS® Buck converter series
Feature
N-Channel
Logic Level
Very low on-resistance RDS(on)
Excellent Gate Charge x RDS(on) product (FOM)
Superior thermal resistance
175°C operating temperature
Avalanche rated
dv/dt rated
Ideal for fast switching buck converters
IPP05N03L
IPB05N03L
Product Summary
VDS 30 V
RDS(on) max. SMD version 4.9 m
ID 80 A
P- TO263 -3-2
P- TO220 -3-1
Type
IPP05N03L
IPB05N03L
Package
Ordering Code
P- TO220 -3-1 Q67042-S4038
P- TO263 -3-2 Q67040-S4343
Marking
05N03L
05N03L
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
TC = 25 °C 1)
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=55A, VDD=25V, RGS=25
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
80
80
320
60
16
6
±20
167
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-01-17


Infineon Technologies Electronic Components Datasheet

05N03L Datasheet

IPB05N03L

No Preview Available !

05N03L pdf
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
IPP05N03L
IPB05N03L
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
- 0.6 0.9 K/W
- - 62
- - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
ID=100µA
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=55A
VGS=4.5V, ID=55A, SMD version
Drain-source on-state resistance4)
VGS=10V, ID=55A
VGS=10V, ID=55A, SMD version
V(BR)DSS 30
-
-V
VGS(th)
1.2 1.6
2
I DSS
I GSS
µA
- 0.01 1
- 10 100
- 1 100 nA
RDS(on)
m
- 5.6 7.5
- 5.2 7.2
RDS(on)
-
4 5.2
- 3.7 4.9
1Current limited by bondwire ; with an RthJC = 0.9K/W the chip is able to carry ID= 145A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Diagrams are related to straight lead versions
Page 2
2003-01-17


Part Number 05N03L
Description IPB05N03L
Maker Infineon Technologies
Total Page 8 Pages
PDF Download
05N03L pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 05N03L IPB05N03L Infineon Technologies
Infineon Technologies
05N03L pdf
2 05N03LAG IPU05N03LAG Infineon Technologies
Infineon Technologies
05N03LAG pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components