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Infineon Technologies Electronic Components Datasheet

K15T120 Datasheet

IGBT

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K15T120 pdf
TrenchStop® Series
IKW15T120
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Approx. 1.0V reduced VCE(sat)
and 0.5V reduced VF compared to BUP313D
Short circuit withstand time – 10s
Designed for :
G
E
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
PG-TO-247-3
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKW15T120 1200V 15A
1.7V
150C K15T120
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150C
Diode forward current
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Package
PG-TO-247-3
Value
1200
30
15
45
45
30
15
45
20
10
110
-40...+150
-55...+150
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.4 12.06.2013
Free Datasheet http://www.Datasheet4U.com



Infineon Technologies Electronic Components Datasheet

K15T120 Datasheet

IGBT

No Preview Available !

K15T120 pdf
TrenchStop® Series
IKW15T120
Soldering temperature, 1.6mm (0.063 in.) from case for 10s -
260
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
1.1
1.5
40
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Symbol
Conditions
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=0.5mA
VGE = 15V, IC=15A
Tj=25C
Tj=125C
Tj=150C
VGE=0V, IF=15A
Tj=25C
Tj=125C
Tj=150C
IC=0.6mA,VCE=VGE
VCE=1200V,
VGE=0V
Tj=25C
Tj=150C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=15A
min.
1200
-
-
-
-
-
-
5.0
-
-
-
-
Value
typ.
-
1.7
2.0
2.2
1.7
1.7
1.7
5.8
-
-
-
10
none
Unit
max.
-V
2.2
-
-
2.2
-
-
6.5
mA
0.2
2.0
100 nA
-S
Ω
IFAG IPC TD VLS
2
Rev. 2.4 12.06.2013
Free Datasheet http://www.Datasheet4U.com



Infineon Technologies Electronic Components Datasheet

K15T120 Datasheet

IGBT

No Preview Available !

K15T120 pdf
TrenchStop® Series
IKW15T120
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=15A
VGE=15V
VGE=15V,tSC10s
VCC = 600V,
Tj = 25C
-
-
-
-
-
-
1100
100
50
85
13
90
- pF
-
-
- nC
- nH
-A
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25C,
VCC=600V,IC=15A,
VGE=0/15V,
RG=56,
L2)=180nH,
C2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25C,
VR=600V, IF=15A,
diF/dt=600A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
50
30
520
60
1.3
1.4
2.7
140
1.9
17
230
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
IFAG IPC TD VLS
3
Rev. 2.4 12.06.2013
Free Datasheet http://www.Datasheet4U.com




Part Number K15T120
Description IGBT
Maker Infineon
Total Page 15 Pages
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