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Infineon Technologies Electronic Components Datasheet

K15N60 Datasheet

SKP15N60

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K15N60 pdf
SKP15N60
SKW15N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
75% lower Eoff compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10 µs
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
www.DataSheet4U.com- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
PG-TO-220-3-1
(TO-220AB)
Very soft, fast recovery anti-parallel EmCon diode
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3-21
(TO-247AC)
Type
SKP15N60
SKW15N60
VCE IC VCE(sat) Tj Marking Package
600V 15A
2.3V
150°C K15N60 PG-TO-220-3-1
600V 15A
2.3V
150°C K15N60 PG-TO-247-3-21
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2
VGE = 15V, VCC 600V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj , Tstg
Ts
Value
600
31
15
62
62
Unit
V
A
31
15
62
±20
10
139
-55...+150
260
V
µs
W
°C
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2_1 Apr 06



Infineon Technologies Electronic Components Datasheet

K15N60 Datasheet

SKP15N60

No Preview Available !

K15N60 pdf
SKP15N60
SKW15N60
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
www.DataSheetT4Uh.ecrommal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
PG-TO-220-3-1
PG-TO-247-3-1
Max. Value
0.9
1.7
62
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
Ciss
Coss
Crss
QGate
LE
IC(SC)
VGE=0V, IC=500µA
VGE = 15V, IC=15A
Tj=25°C
Tj=150°C
VGE=0V, IF=15A
Tj=25°C
Tj=150°C
IC=400µA,VCE=VGE
VCE=600V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=15A
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=15A
VGE=15V
PG-TO-220-3-1
PG-TO-247-3-21
VGE=15V,tSC10µs
VCC 600V,
Tj 150°C
min.
600
1.7
-
1.2
-
3
-
-
-
3
-
-
-
-
-
-
-
Value
Typ.
-
2
2.3
1.4
1.25
4
-
-
-
10.9
800
84
52
76
7
13
150
Unit
max.
-V
2.4
2.8
1.8
1.65
5
40
2000
100
-
µA
nA
S
960 pF
101
62
99 nC
- nH
-
-A
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2_1 Apr 06



Infineon Technologies Electronic Components Datasheet

K15N60 Datasheet

SKP15N60

No Preview Available !

K15N60 pdf
SKP15N60
SKW15N60
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
www.DataSheetF4Ua.llcotimme
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=400V,IC=15A,
VGE=0/15V,
RG=21,
Lσ1) =180nH,
Cσ1) =250pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=200V, IF=15A,
diF/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
32
23
234
46
0.30
0.27
0.57
279
28
254
390
5.0
180
Unit
max.
38 ns
28
281
55
0.36 mJ
0.35
0.71
- ns
-
-
- nC
-A
- A/µs
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=150°C
VCC=400V,IC=15A,
VGE=0/15V,
RG=21,
CL σσ11))
=180nH,
=250pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150°C
VR=200V, IF=15A,
diF/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
31
23
261
54
0.45
0.41
0.86
360
40
320
1020
7.5
200
Unit
max.
38 ns
28
313
65
0.54 mJ
0.53
1.07
- ns
-
-
- nC
-A
- A/µs
1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
3 Rev. 2_1 Apr 06




Part Number K15N60
Description SKP15N60
Maker Infineon
Total Page 14 Pages
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