http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Infineon Technologies Electronic Components Datasheet

09N05 Datasheet

SPD09N05

No Preview Available !

09N05 pdf
SPD 09N05
SIPMOS® Power Transistor
Features
N channel
Enhancement mode
Avalanche rated
Product Summary
Drain source voltage
VDS 55 V
Drain-Source on-state resistance RDS(on) 0.1
Continuous drain current
ID 9.2 A
www.DataSheet4Ud.cvom/dt rated
175˚C operating temperature
Type
SPD09N05
SPU09N05
Package
P-TO252
P-TO251
Ordering Code Packaging
Q67040-S4136 Tape and Reel
Q67040-S4130-A2 Tube
Pin 1 Pin 2 Pin 3
GDS
MaximumRatings , at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 ˚C
TC = 100 ˚C
ID
Pulsed drain current
IDpulse
TC = 25 ˚C
Avalanche energy, single pulse
ID = 9.2 A, VDD = 25 V, RGS = 25
EAS
Avalanche energy, periodic limited by Tjmax
EAR
Reverse diode dv/dt
dv/dt
IS = 9.2 A, VDS = 40 V, di/dt = 200 A/µs
Gate source voltage
Power dissipation
TC = 25 ˚C
VGS
Ptot
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Value
9.2
6.5
37
35
2.4
6
±20
24
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
˚C
Data Sheet
1
06.99
Free Datasheet http://www.datasheet-pdf.com/


Infineon Technologies Electronic Components Datasheet

09N05 Datasheet

SPD09N05

No Preview Available !

09N05 pdf
SPD 09N05
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leded
www.DataSheet4U.com
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area1)
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
- - 6.25 K/W
- - 100
- - 75
- - 50
Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA
V(BR)DSS 55
-
-V
Gate threshold voltage, VGS = VDS
ID = 10 µA
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = 25 ˚C
VDS = 50 V, VGS = 0 V, Tj = 150 ˚C
VGS(th)
2.1
3
4
IDSS
µA
- 0.1 1
- - 100
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 6.5 A
IGSS
RDS(on)
- 10 100 nA
- 0.093 0.1
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet
2
06.99
Free Datasheet http://www.datasheet-pdf.com/


Part Number 09N05
Description SPD09N05
Maker Infineon
Total Page 8 Pages
PDF Download
09N05 pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 09N03 PJD09N03 Pan Jit International
Pan Jit International
09N03 pdf
2 09N03LA IPB09N03LA Infineon Technologies
Infineon Technologies
09N03LA pdf
3 09N05 SPD09N05 Infineon
Infineon
09N05 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components