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Inchange Semiconductor
Inchange Semiconductor

D1517 Datasheet Preview

D1517 Datasheet

2SD1517

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D1517 pdf
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD1517
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC= 2A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
·Good Linearity of hFE
·High Speed Switching
APPLICATIONS
·Designed for power amplifier,power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
130 V
wwwVCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous 2 A
ICM Collector Current-Peak
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ Junction Temperature
5A
25
W
2
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn




Inchange Semiconductor
Inchange Semiconductor

D1517 Datasheet Preview

D1517 Datasheet

2SD1517

No Preview Available !

D1517 pdf
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD1517
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
80
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.1A
VBE(sat)
Base-Emitter Saturation Voltage
IC= 2A; IB=B 0.1A
ICBO Collector Cutoff Current
VCB= 100V; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
0.5 V
1.5 V
10 μA
50 μA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 2V
45
hFE-2
DC Current Gain
i.cnfT Current-Gain—Bandwidth Product
.iscsemSwitching times
wton Turn-on Time
wwtstg Storage Time
IC= 0.5A; VCE= 2V
IC= 0.5A; VCE= 10V; f= 10MHz
IC= 0.5A; IB1= -IB2= 50mA;
VCC= 50V
60 260
25 MHz
0.1 μs
2.5 μs
tf Fall Time
0.3 μs
‹ hFE-2 classifications
RQ
P
60-120
90-180
130-260
isc Websitewww.iscsemi.cn
2




Part Number D1517
Description 2SD1517
Maker Inchange Semiconductor
Total Page 2 Pages
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