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BD544C Inchange Semiconductor Silicon PNP Power Transistors

Description ·70 W at 25°C Case Temperature ·Complement to Type BD543/A/B/C ·8 A Continuous Collector Current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD544 -40 BD544A -60 VCBO Collector-Base Voltage V BD544B -80 BD544C -100 ...
Features site:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BD544/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD544 -40 V(BR)CEO Collector-Emitter Breakdown Voltage BD544A BD544B IC= -30mA ; IB= 0 -60 -80 V BD544C -100 VCE(sat)...

Datasheet PDF File BD544C Datasheet - 194.66KB

BD544C  






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